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Controlling the carbon vacancy in 4H-SiC by thermal processing
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2018 (English)In: ECS Transactions, Electrochemical Society Inc. , 2018, no 12, p. 91-97Conference paper, Published paper (Refereed)
Abstract [en]

The carbon vacancy (Vc) is perhaps the most prominent point defect in silicon carbide (SiC) and it is an efficient charge carrier lifetime killer in high-purity epitaxial layers of 4H-SÌC. The Vc concentration needs to be controlled and minimized for optimum materials and device performance, and an approach based on post-growth thermal processing under C-rich ambient conditions is presented. It utilizes thermodynamic equilibration and after heat treatment at 1500 °C for 1 h, the Vc concentration is shown to be reduced by a factor-25 relative to that in as-grown state-of-the-art epi-layers. Concurrently, a considerable enhancement of the carrier lifetime occurs throughout the whole of >40 urn thick epi-layers. 

Place, publisher, year, edition, pages
Electrochemical Society Inc. , 2018. no 12, p. 91-97
Keywords [en]
Carbon, Carrier lifetime, Gallium nitride, Heat treatment, III-V semiconductors, After-heat treatment, Ambient conditions, As-grown, Carbon vacancy, Device performance, High purity, Silicon carbides (SiC), State of the art, Silicon carbide
National Category
Materials Chemistry
Identifiers
URN: urn:nbn:se:kth:diva-246562DOI: 10.1149/08612.0091ecstScopus ID: 2-s2.0-85058420747OAI: oai:DiVA.org:kth-246562DiVA, id: diva2:1318365
Conference
Symposium on Gallium Nitride and Silicon Carbide Power Technologies 8 - AiMES 2018, ECS and SMEQ Joint International Meeting, 30 September 2018 through 4 October 2018
Note

QC 20190527

Available from: 2019-05-27 Created: 2019-05-27 Last updated: 2019-05-27Bibliographically approved

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Hallén, Anders

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