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On the long-wavelength optimization of highly strained InGaAs/GaAs quantum wells grown by metal-organic vapor-phase epitaxy
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-9040-4740
2008 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 310, no 13, 3163-3167 p.Article in journal (Refereed) Published
Abstract [en]

We have investigated the influence of the metal-organic vapor-phase epitaxy growth conditions on the long-wavelength optimization of InGaAs/GaAs quantum wells (QWs). It is found that the V/III ratio is a critical parameter for the in incorporation and wavelength extension, with a strong sensitivity even at very high values. Furthermore, it is noted that the exact crystallographic substrate surface orientation close to (001) may have a strong influence on the photoluminescence (PL) properties with a maximum PL wavelength for orientations within 0.01-0.03 degrees from (0 0 1). This is discussed in terms of changing interface morphology and growth modes with increasing misorientation. Finally, the application of antimony as surfactant is not found to have an improving effect on the layer integrity, whereas a slight extension of the emission wavelength indicates a small incorporation of antimony in the QWs.

Place, publisher, year, edition, pages
2008. Vol. 310, no 13, 3163-3167 p.
Keyword [en]
A1. Photoluminescence, A1. Substrates, A3. Metal-organic vapor-phase epitaxy, A3. Quantum wells, B2. InGaAs
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-8029DOI: 10.1016/j.jcrysgro.2008.04.007ISI: 000257353500007Scopus ID: 2-s2.0-46549083875OAI: oai:DiVA.org:kth-8029DiVA: diva2:13239
Note
QC 20100924. Uppdaterad från Manuskript till Artikel (20100924). Tidigare Titel "On the long wavelength optimization of highly strained InGaAs/GaAs grown by metal-organic vapor-phase epitaxy. Available from: 2008-02-25 Created: 2008-02-25 Last updated: 2017-12-14Bibliographically approved
In thesis
1. Epitaxial growth optimization for 1.3-um InGaAs/GaAs Vertical-Cavity Surface-Emitting lasers
Open this publication in new window or tab >>Epitaxial growth optimization for 1.3-um InGaAs/GaAs Vertical-Cavity Surface-Emitting lasers
2008 (English)Licentiate thesis, comprehensive summary (Other scientific)
Abstract [en]

Long-wavelength (1.3-μm) vertical-cavity surface-emitting lasers (VCSELs) are of great interest as low-cost, high performance light sources for fiber-optic metro and access networks. During recent years the main development effort in this field has been directed towards all epitaxial GaAs-based structures by employing novel active materials. Different active region candidates for GaAs-based 1.3-μm VCSELs such as GaInNAs/GaAs QWs, GaAsSb QWs or InAs/InGaAs QDs have been investigated. However, the difficult growth and materials properties of these systems have so far hampered any real deployment of the technology. More recently, a new variety of VCSELs have been developed at KTH as based on highly strained InGaAs QWs and negative gain cavity detuning to reach the 1.3-μm wavelength window. The great benefit of this approach is that it is fully compatible with standard materials and processing methods.

The aim of this thesis is to investigate long-wavelength (1.3-μm) VCSELs using ~1.2-μm In0.4GaAs/GaAs Multiple Quantum Wells (MQWs). A series of QW structures, DBR structures and laser structures, including VCSELs and Broad Area lasers (BALs) were grown by metal-organic vapor phase epitaxy (MOVPE) and characterized by various techniques: Photoluminescence (PL), high-resolution x-ray diffraction (XRD), atomic force microscopy (AFM), high accuracy reflectance measurements as well as static and dynamic device characterization. The work can be divided into three parts. The first part is dedicated to the optimization and characterization of InGaAs/GaAs QWs growth for long wavelength and strong luminescence. A strong sensitivity to the detailed growth conditions, such as V/III ratio and substrate misorientation is noted. Dislocations in highly strained InGaAs QW structure and Sb as surfactant assisted in InGaAs QW growth are also discussed here. The second part is related to the AlGaAs/GaAs DBR structures. It is shown that the InGaAs VCSELs with doped bottom DBRs have significantly lower slope efficiency, output power and higher threshold current. By a direct study of buried AlGaAs/GaAs interfaces, this is suggested to be due to doping-enhanced Al-Ga hetero-interdiffusion. In the third part, singlemode, high-performance 1.3-μm VCSELs based on highly strained InGaAs QWs are demonstrated. Temperature stable singlemode performance, including mW-range output power and 10 Gbps data transmission, is obtained by an inverted surface relief technique.

Place, publisher, year, edition, pages
Stockholm: KTH, 2008. 51 p.
Series
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2008:4
Keyword
VCSEL MOVPE InGaAs/GaAs quantum wells
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kth:diva-4648 (URN)978-91-7178-866-5 (ISBN)
Presentation
2008-03-07, Sal N2, Electrum 3, Isafjordsgatan 28, Kista, 14:00
Opponent
Supervisors
Note
QC 20101126Available from: 2008-02-25 Created: 2008-02-25 Last updated: 2010-11-26Bibliographically approved
2. Materials and Processing Technologies for Advanced Electronic and Photonic Devices
Open this publication in new window or tab >>Materials and Processing Technologies for Advanced Electronic and Photonic Devices
2014 (English)Doctoral thesis, comprehensive summary (Other academic)
Place, publisher, year, edition, pages
stockholm: KTH Royal Institute of Technology, 2014. 84 p.
Series
TRITA-ICT/MAP AVH, ISSN 1653-7610 ; 2014:15
National Category
Engineering and Technology
Identifiers
urn:nbn:se:kth:diva-157138 (URN)978-91-7595-351-9 (ISBN)
Public defence
2014-12-17, Sal/Hal A, Electrum, KTH-ICT, Kista, 10:00 (English)
Opponent
Supervisors
Note

QC 20141208

Available from: 2014-12-08 Created: 2014-12-07 Last updated: 2014-12-08Bibliographically approved

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Hammar, Mattias

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