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Humidity effect on photoelectrical properties of photosensitive field effect transistors
KTH, School of Engineering Sciences in Chemistry, Biotechnology and Health (CBH), Biomedical Engineering and Health Systems, Health Informatics and Logistics. State Key Laboratory of ASIC and System, Center of Micro-Nano System, School of Information Science and Technology, Fudan University, Shanghai, China.
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2019 (English)In: Organic electronics, ISSN 1566-1199, E-ISSN 1878-5530, Vol. 69, p. 42-47Article in journal (Refereed) Published
Abstract [en]

Environmental influences are critical for the reliability of photoelectric devices, especially those using organic semiconductors. Among all the influence factors, the effect of relative humidity on the material's photoelectrical properties receives less attentions. To date, reported humidity effects are mostly related to the electrical properties. Their impact to the photoelectrical characteristics has rarely been investigated. In this work, we firstly report a detailed study on the dependency of material's photoelectrical properties on the relative humidity in photosensitive field effect transistors. It was found that both the amplitude and the decay time of the photocurrent indicated a profound dependency on the humidity. To further clarify the mechanism, experiments were carefully designed along with a simulation to recognize and to provide a detailed understanding on any possible influence factors in these processes. The results indicate a prominent co-existence of carrier-trapping and dielectric-polarization phenomena in the photoelectric device under the influences of humidity. Since the water molecules in the atmosphere are predominant, the observed variation in the photoelectrical properties can be explained.

Place, publisher, year, edition, pages
Elsevier, 2019. Vol. 69, p. 42-47
Keywords [en]
Humidity, Photocurrent decay, Polarization, Trapping, Atmospheric humidity, Light sensitive materials, Molecules, Photoelectric devices, Photoelectricity, Photosensitivity, Carrier trapping, Dielectric polarization, Environmental influences, Humidity effects, Photo-electrical properties, Photosensitive field-effect transistors, Field effect transistors
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-252519DOI: 10.1016/j.orgel.2019.03.005ISI: 000466385800007Scopus ID: 2-s2.0-85062812057OAI: oai:DiVA.org:kth-252519DiVA, id: diva2:1326598
Note

QC 20190618

Available from: 2019-06-18 Created: 2019-06-18 Last updated: 2019-06-26Bibliographically approved

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Yang, Kunlong

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