Electronic structure and electron dynamics at the GaSb(001) surface studied by femtosecond pump-and-probe pulsed laser photoemission spectroscopy
2006 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 252, no 15, 5308-5311 p.Article in journal (Refereed) Published
Transiently excited electron states at the GaSb(001) surface have been studied by means of time- and angle-resolved photoemission spectroscopy based on a femtosecond laser system. A normally unpopulated surface electron state has been found at similar to 250 meV above the valence band maximum with a strong confinement at the center of the surface Brillouin zone. The lifetime of transiently excited carriers at the intergap surface states has been found to be similar to 11 ps, associated with rapid carrier diffusion.
Place, publisher, year, edition, pages
2006. Vol. 252, no 15, 5308-5311 p.
Angle-resolved photoemission; Gallium antimonide; Laser methods; Photoelectron emission; Surface states; Diffusion; Electrodynamics; Electronic structure; Laser theory; Photoemission; Spectroscopic analysis; Semiconducting gallium compounds
Other Engineering and Technologies not elsewhere specified
IdentifiersURN: urn:nbn:se:kth:diva-8061DOI: 10.1016/j.apsusc.2005.12.138ISI: 000238623300017ScopusID: 2-s2.0-33746802374OAI: oai:DiVA.org:kth-8061DiVA: diva2:13282
QC 20100810. Titel ändrad, tidigare titel: "Electron structure and electron dynamics at the GaSb(001) surface studied by femtosecond pump-and-probe pulsed laser surface studied by femtosecond pump-and-probe pulsed laser" 20100810.
Konferens: 8th International Conference on Atomically Controlled Surfaces, Interfaces, and Nanostructures/13th International Congress on Thin Films, Stockholm, 2005.2007-12-122007-12-122011-10-04Bibliographically approved