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An Improved 4H-SiC Trench-Gate MOSFET With Low ON-Resistance and Switching Loss
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.ORCID iD: 0000-0002-8760-1137
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2019 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 66, no 5, p. 2307-2313, article id 8681267Article in journal (Refereed) Published
Abstract [en]

In this paper, an improved 4H-SiC U-shaped trench-gate metal-oxide-semiconductor field-effect transistors (UMOSFETs) structure with low ON-resistance (R ON ) and switching energy loss is proposed. The novel structure features an added n-type region, which reduces ON-resistance of the device significantly while maintaining the breakdown voltage (V BR ). In addition, the gate of the improved structure is designed as a p-n junction to reduce the switching energy loss. Simulations by Sentaurus TCAD are carried out to reveal the working mechanism of this improved structure. For the static performance, the ON-resistance and the figure of merit (FOM = V BR 2 /R ON ) of the optimized structure are improved by 40% and 44%, respectively, as compared to a conventional trench MOSFET without the added n-type region and modified gate. For the dynamic performance, the turn-on time (T ON ) and turn-off time (T OFF ) of the proposed structure are both shorter than that of the conventional structure, bringing a 43% and 30% reduction in turn-on energy loss and total switching energy loss (E SW ). © 2019 IEEE.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers Inc. , 2019. Vol. 66, no 5, p. 2307-2313, article id 8681267
Keywords [en]
Breakdown voltage, ON-resistance, silicon carbide, switching energy loss, U-shaped trench-gate metal-oxide-semiconductor field-effect transistors (UMOSFETs), Dielectric devices, Electric breakdown, Energy dissipation, Metallic compounds, Metals, MOS devices, Oxide semiconductors, Semiconducting silicon compounds, Semiconductor junctions, Switching, Transistors, Wide band gap semiconductors, Conventional structures, Dynamic performance, Improved structures, Optimized structures, Switching energy, Trench gates, Trench-gate mosfet, MOSFET devices
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-252507DOI: 10.1109/TED.2019.2905636Scopus ID: 2-s2.0-85064973294OAI: oai:DiVA.org:kth-252507DiVA, id: diva2:1336857
Note

QC 20190710

Available from: 2019-07-10 Created: 2019-07-10 Last updated: 2019-07-10Bibliographically approved

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Hallén, Anders

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