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High isotropic dispiro structure hole transporting materials for planar perovskite solar cells
DUT, State Key Lab Fine Chem, Inst Artificial Photosynth, DUT KTH Joint Educ & Res Ctr Mol Devices, Dalian 116024, Liaoning, Peoples R China..
DUT, State Key Lab Fine Chem, Inst Artificial Photosynth, DUT KTH Joint Educ & Res Ctr Mol Devices, Dalian 116024, Liaoning, Peoples R China..
DUT, State Key Lab Fine Chem, Inst Artificial Photosynth, DUT KTH Joint Educ & Res Ctr Mol Devices, Dalian 116024, Liaoning, Peoples R China..
DUT, State Key Lab Fine Chem, Inst Artificial Photosynth, DUT KTH Joint Educ & Res Ctr Mol Devices, Dalian 116024, Liaoning, Peoples R China..
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2019 (English)In: Journal of Energy Challenges and Mechanics, ISSN 2095-4956, E-ISSN 2056-9386, Vol. 32, p. 152-158Article in journal (Refereed) Published
Abstract [en]

Two novel fluorene-based hole transporting materials (HTMs) were synthesized to be used in perovskite solar cells (PSCs). C102 was designed based on C101 by simply linking the two carbon-carbon single bonds to compose a "dispiro" structure. Their typically similar structures cause them sharing almost the same energy levels. However, their photovoltaic performances are quite different due to the small variations. The PSC that contained the "dispiro" structure, C102, reached a power conversion efficiency (PCE) of 17.4%, while the device contained C101, obtained a lower PCE of 15.5%. Electrochemical properties and Photovoltaic characterization of the two materials have been investigated to explain the result. It is shown that C102 has a stronger ability to transport holes and resist the charge recombination. Thus, the dispiro structure should be more appropriate being used as HTM in PSCs. Physics, Chinese Academy of Sciences.

Place, publisher, year, edition, pages
Elsevier, 2019. Vol. 32, p. 152-158
Keywords [en]
Dispiro, Hole transporting materials, Planar perovskite solar cells
National Category
Materials Chemistry
Identifiers
URN: urn:nbn:se:kth:diva-255339DOI: 10.1016/j.jechem.2018.07.013ISI: 000473219200016Scopus ID: 2-s2.0-85052139154OAI: oai:DiVA.org:kth-255339DiVA, id: diva2:1341045
Note

QC 20190807

Available from: 2019-08-07 Created: 2019-08-07 Last updated: 2019-08-07Bibliographically approved

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Sun, Licheng

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