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Quantized Fermi arc mediated transport in Weyl semimetal nanowires
KTH, School of Engineering Sciences (SCI), Physics, Condensed Matter Theory.
KTH, School of Engineering Sciences (SCI), Physics, Condensed Matter Theory.ORCID iD: 0000-0003-3328-8525
2019 (English)In: Physical Review B, ISSN 2469-9950, E-ISSN 2469-9969, Vol. 100, no 8, article id 085424Article in journal (Refereed) Published
Abstract [en]

We study longitudinal transport in Weyl semimetal nanowires, both in the absence and in the presence of a magnetic flux threading the nanowires. We identify two qualitatively different regimes of transport with respect to the chemical potential in the nanowires. In the "surface regime," for low doping, most of the conductance occurs through the Fermi arc surface states, and it rises in steps of one quantum of conductance as a function of the chemical potential; furthermore, with varying flux the conductance changes in steps of one quantum of conductance with characteristic Fabry-Perot interference oscillations. In the "bulk-surface regime," for highly doped samples, the dominant contribution to the conductance is quadratic in the chemical potential, and mostly conditioned by the bulk states; the flux dependence shows clearly that both the surface and the bulk states contribute. The two aforementioned regimes prove that the contribution of Fermi arc surface states is salient and, therefore, crucial for understanding transport properties of finite-size Weyl semimetal systems. Last but not least, we demonstrate that both regimes are robust to disorder.

Place, publisher, year, edition, pages
American Physical Society, 2019. Vol. 100, no 8, article id 085424
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-257435DOI: 10.1103/PhysRevB.100.085424ISI: 000480687800004Scopus ID: 2-s2.0-85072101886OAI: oai:DiVA.org:kth-257435DiVA, id: diva2:1347635
Note

QC 20190902

Available from: 2019-09-02 Created: 2019-09-02 Last updated: 2019-10-04Bibliographically approved

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Kaladzhyan, VardanBardarson, Jens H.

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