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Instigated Photonic Response of 1-D ZnO Nanostructures Grown on Surface-State Modified Seed Crystals
Lund Univ, NanoLund & Solid State Phys, Box 118, S-22100 Lund, Sweden..
Lund Univ, NanoLund & Solid State Phys, Box 118, S-22100 Lund, Sweden..
KTH, School of Architecture and the Built Environment (ABE), Urban Planning and Environment.
2019 (English)In: Journal of Nanoelectronics and Optoelectronics, ISSN 1555-130X, E-ISSN 1555-1318, Vol. 14, no 10, p. 1388-1393Article in journal (Refereed) Published
Abstract [en]

Surface states modification techniques has a vital impact on the opto-electronic properties of nanostructures grown via low temperature process. In this research case, electron transport phenomenon is explored for ZnO nanostructures which are grown on seed crystals with distinct surface states. ZnO nanostructures grown on seed crystals annealed in vacuum ambient showed superior photonic response in contrast to nanostructures grown on seed crystals annealed in air ambient. By synthesizing n-ZnO nanostructures on p-Si substrate, we observed 2.3 times increase in ultra violet emission intensity along with 2.1 times suppression of visible emission intensity from the nanostructures grown vacuum annealed seed crystals. Similarly, the ratio of dark to ultra violet current of p-Si/n-ZnO photodetector based on nanostructures grown on vacuum annealed seed crystals is enhanced 20 times in forward bias condition and 14 times in reverse bias condition. Moreover, we observed a significant decrease of 9 s in transient time of photodetector for nanostructures annealed in vacuum ambient. Modification of surface states for seed crystals to grow high quality crystalline nanostructures can be deployed in wide range of optics, light emitting diodes, nano-generators, piezoelectric transducers and several other practical applications.

Place, publisher, year, edition, pages
American Scientific Publishers, 2019. Vol. 14, no 10, p. 1388-1393
Keywords [en]
Photodetector, Photoluminescence, Photo Response Characteristics, ZnO Nanostructures, Transient Time Response
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URN: urn:nbn:se:kth:diva-257427DOI: 10.1166/jno.2019.2569ISI: 000480422700006OAI: oai:DiVA.org:kth-257427DiVA, id: diva2:1347764
Note

QC 20190902

Available from: 2019-09-02 Created: 2019-09-02 Last updated: 2019-09-02Bibliographically approved

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