Avalanche breakdown in surface modified silicon nanowires
2007 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 91, no 10, 103502-1-103502-3 p.Article in journal (Refereed) Published
The electrical conductance of semiconductor nanowires can be changed by charges present on the nanowire surface. At high surface charge density, however, the nanowire channel may be quenched leading to a large shift in the I-DS-V-DS characteristics. In this letter, the authors demonstrate that this shift in V-DS is related to an avalanche effect in the nanowire. Silicon nanowires were fabricated in a top-down approach and the nanowire surface charge density was modified through buffer solutions of different pH values. Computer simulations using representative surface charge and interface charge densities clearly reproduce the data and unambiguously demonstrate the avalanche effect.
Place, publisher, year, edition, pages
2007. Vol. 91, no 10, 103502-1-103502-3 p.
Charge density; Computer simulation; Electric conductance; Semiconducting silicon; Surface charge; Surface treatment; Avalanche breakdown; Avalanche effect; Nanowire channels
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-8219DOI: 10.1063/1.2779110ISI: 000249322900073ScopusID: 2-s2.0-34548502168OAI: oai:DiVA.org:kth-8219DiVA: diva2:13480
QC 201007162008-04-092008-04-092010-07-16Bibliographically approved