Room-temperature photoluminescence of doped 4H-SiC film grown on AlN/Si(100)
2007 (English)In: Applied Physics A: Materials Science & Processing, ISSN 0947-8396, E-ISSN 1432-0630, Vol. 86, no 1, 145-149 p.Article in journal (Refereed) Published
Well-defined room-temperature photoluminescence (PL) was observed from 4H-SiC films on AlN/Si(100) complex substrates grown at temperatures below 1150 degrees C by the chemical vapor deposition method. The PL spectrum consists of three major emission peaks in the vicinities of 3.03, 3.17 and 3.37 eV. By the combination of experimental measurements and theoretical analysis, the origins of the PL emission peaks have been identified and associated with N donors, Al acceptors in the 4H-SiC films and the band-to-band transition between the second minimum of the conduction band and the top of valance band of the 4H-SiC. The room-temperature SiC PL can be much utilized for optoelectronic high-power, high-frequency and high-temperature applications in the ultraviolet spectral regime.
Place, publisher, year, edition, pages
2007. Vol. 86, no 1, 145-149 p.
Chemical vapor deposition; Film growth; Light emission; Phase transitions; Photoluminescence; Silicon carbide; Spectrum analysis; 4H-SiC films; Band-to-band transition; PL emission; Valance band
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-8231DOI: 10.1007/s00339-006-3740-8ISI: 000242013700021ScopusID: 2-s2.0-33750972004OAI: oai:DiVA.org:kth-8231DiVA: diva2:13496
QC 201007302008-04-182008-04-182010-07-30Bibliographically approved