Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
TCAD Model Calibration of High Voltage 4H-SiC Bipolar Junction Transistors
KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electric Power and Energy Systems. ABB Corporate Research. (Power Electronics)ORCID iD: 0000-0001-9790-5524
ABB Corporate Research.
KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electric Power and Energy Systems. (Power Electronics)ORCID iD: 0000-0002-1755-1365
2019 (English)Conference paper, Poster (with or without abstract) (Refereed)
Abstract [en]

In this project, a Technology CAD (TCAD) model has been calibrated and verified against experimental data of a 15 kV silicon carbide (SiC) bipolar junction transistor (BJT). The device structure of the high voltage BJT has been implemented in the Synopsys Sentaurus TCAD simulation platform and design of experiment simulations have been performed to  extract and fine-tune device parameters and 4H-SiC material parameters to accurately reflect the 15 kV SiC BJT experimental results. The set of calibrated TCAD parameters may serve as a base for further investigations of various SiC device design and device operation in electrical circuits.

Place, publisher, year, edition, pages
2019. Vol. 963, p. 670-673
Series
Materials Science Forum, ISSN 1662-9752
Keywords [en]
TCAD, Modeling, Silicon Carbide, 4H-SiC, Bipolar Junction Transistor, BJT
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-258412DOI: 10.4028/www.scientific.net/MSF.963.670Scopus ID: 2-s2.0-85071881291OAI: oai:DiVA.org:kth-258412DiVA, id: diva2:1349974
Conference
12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018)
Funder
SweGRIDS - Swedish Centre for Smart Grids and Energy Storage
Note

QC 20191209

Available from: 2019-09-10 Created: 2019-09-10 Last updated: 2020-01-22Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Johannesson, DanielNee, Hans-Peter
By organisation
Electric Power and Energy Systems
Other Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 40 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf