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Domain wall motion in stoichiometric LiTaO3 induced by low-energy electron beam
KTH, School of Engineering Sciences (SCI), Applied Physics, Laser Physics.ORCID iD: 0000-0001-7306-0272
KTH, School of Engineering Sciences (SCI), Applied Physics.ORCID iD: 0000-0001-7688-1367
KTH, School of Engineering Sciences (SCI), Applied Physics.ORCID iD: 0000-0003-2070-9167
2019 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 115, no 5, article id 052901Article in journal (Refereed) Published
Abstract [en]

Scanning electron microscopy was used to study the mobility of domain walls in vapor-transport equilibrated stoichiometric LiTaO3. By using low-acceleration voltage, switching occurs solely for polarization pointing up domains, resulting in fast domain-wall motion. When the incoming electron beam was more energetic with larger penetration depth, the switching instead occurred for polarization pointing down domains. Our results are discussed in terms of the interaction of the scanning electron beam with the polarization-screening charges at the crystal surface.

Place, publisher, year, edition, pages
AMER INST PHYSICS , 2019. Vol. 115, no 5, article id 052901
National Category
Condensed Matter Physics
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URN: urn:nbn:se:kth:diva-257572DOI: 10.1063/1.5101039ISI: 000478913700014Scopus ID: 2-s2.0-85070060048OAI: oai:DiVA.org:kth-257572DiVA, id: diva2:1353381
Note

QC 20190923

Available from: 2019-09-23 Created: 2019-09-23 Last updated: 2019-09-23Bibliographically approved

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Kianirad, HodaLaurell, FredrikCanalias, Carlota

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