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Silicon Carbide Bipolar Analog Circuits for Extreme Temperature Signal Conditioning
Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA..
Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA..
Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA..
Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA..
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2019 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 66, no 9, p. 3764-3770Article in journal (Refereed) Published
Abstract [en]

This paper presents functional hightemperature analog circuits in silicon carbide bipolar technology. The circuits will collectively form the analog signal conditioning block for a wireless telemetry system in an extreme environment (above 400 degrees C). The signal conditioningblock is composed of a lowdc gain operational amplifier, a negative voltage charge pump (CP), an RC oscillator, and a voltage regulator. The circuits are tested up to 450 degrees C. The measured open-loop gain for the amplifier at 450 degrees C is 30 dB. The regulator provides approximately 9-V output at 450 degrees C for a fixed load current of up to 18 mA and an applied reference of 4.5 V. The negative voltage CP requires an oscillating signal at its input, which is provided by the RC cross-coupled oscillator. The CP provides about -5 V at 450 degrees C.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 2019. Vol. 66, no 9, p. 3764-3770
Keywords [en]
Charge pump (CP), high-temperature, opamp, regulator, SiC bipolar junction transistor (BJT), signal conditioning
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-259425DOI: 10.1109/TED.2019.2928484ISI: 000482583200009Scopus ID: 2-s2.0-85071256550OAI: oai:DiVA.org:kth-259425DiVA, id: diva2:1353919
Note

QC 20190924

Available from: 2019-09-24 Created: 2019-09-24 Last updated: 2019-09-24Bibliographically approved

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Metreveli, AlexZetterling, Carl-Mikael

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