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Fabrication and characterization of Si1-xGex nanocrystals in as-grown and annealed structures: a comparative study
Reykjavik Univ, Sch Sci & Engn, IS-101 Reykjavik, Iceland..
Natl Inst Mat Phys, Magurele 077125, Romania..
Natl Inst Mat Phys, Magurele 077125, Romania..
KTH, School of Electrical Engineering and Computer Science (EECS), Space and Plasma Physics. Univ Iceland, Sci Inst, Dunhaga 3, IS-107 Reykjavik, Iceland..ORCID iD: 0000-0002-8153-3209
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2019 (English)In: Beilstein Journal of Nanotechnology, ISSN 2190-4286, Vol. 10, p. 1873-1882Article in journal (Refereed) Published
Abstract [en]

Multilayer structures comprising of SiO2/SiGe/SiO2 and containing SiGe nanoparticles were obtained by depositing SiO2 layers using reactive direct current magnetron sputtering (dcMS), whereas, Si and Ge were co-sputtered using dcMS and high-power impulse magnetron sputtering (HiPIMS). The as-grown structures subsequently underwent rapid thermal annealing (550-900 degrees C for 1 min) in N-2 ambient atmosphere. The structures were investigated using X-ray diffraction, high-resolution transmission electron microscopy together with spectral photocurrent measurements, to explore structural changes and corresponding properties. It is observed that the employment of HiPIMS facilitates the formation of SiGe nanoparticles (2.1 +/- 0.8 nm) in the as-grown structure, and that presence of such nanoparticles acts as a seed for heterogeneous nucleation, which upon annealing results in the periodically arranged columnar self-assembly of SiGe core-shell nanocrystals. An increase in photocurrent intensity by more than an order of magnitude was achieved by annealing. Furthermore, a detailed discussion is provided on strain development within the structures, the consequential interface characteristics and its effect on the photocurrent spectra.

Place, publisher, year, edition, pages
BEILSTEIN-INSTITUT , 2019. Vol. 10, p. 1873-1882
Keywords [en]
grazing incidence XRD (GIXRD), high-power impulse magnetron sputtering (HiPIMS), HRTEM, magnetron sputtering, photocurrent spectra, SiGe nanocrystals in SiO2/SiGe/SiO2 multilayers, STEM-HAADF, TEM
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-261958DOI: 10.3762/bjnano.10.182ISI: 000487514100001Scopus ID: 2-s2.0-85072880487OAI: oai:DiVA.org:kth-261958DiVA, id: diva2:1361031
Note

QC 20191015

Available from: 2019-10-15 Created: 2019-10-15 Last updated: 2019-10-15Bibliographically approved

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Gudmundsson, Jon Tomas

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