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Buried-Tunnel Junction Current Injection for InP-Based Nanomembrane Photonic Crystal Surface Emitting Lasers on Silicon
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
Univ Texas Arlington, Dept Elect Engn, Arlington, TX 76019 USA..
Univ Texas Arlington, Dept Elect Engn, Arlington, TX 76019 USA..
Univ Texas Arlington, Dept Elect Engn, Arlington, TX 76019 USA..
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2019 (English)In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, article id 1900527Article in journal (Refereed) Published
Abstract [en]

Herein, the design, metal-organic vapor-phase epitaxial growth, fabrication, and characterization of buried-tunnel junction (BTJ) current injection structures for InP/Si hybrid nanomembrane photonic crystal surface emitting lasers (PCSELs) are reported. Corresponding BTJ-light-emitting diodes on InP substrate show low series resistance and uniform carrier injection over square-shaped device areas with side length ranging from 15 up to 250 mu m, whereas BTJ-PCSEL structures with similar current injection configuration fabricated on photonic-crystal silicon-on-insulator substrate using transfer print technology show significant linewidth narrowing at low current density.

Place, publisher, year, edition, pages
WILEY-V C H VERLAG GMBH , 2019. article id 1900527
Keywords [en]
buried-tunnel junctions, photonic bandedge lasers, photonic-crystal surface emitting lasers, silicon photonics, surface emitting lasers
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-261945DOI: 10.1002/pssa.201900527ISI: 000488052400001Scopus ID: 2-s2.0-85073926458OAI: oai:DiVA.org:kth-261945DiVA, id: diva2:1361156
Note

QC 20191015

Available from: 2019-10-15 Created: 2019-10-15 Last updated: 2020-02-04Bibliographically approved

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Reuterskiöld-Hedlund, CarlHammar, Mattias

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