Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
< 50-mu m thin crystalline silicon heterojunction solar cells with dopant-free carrier-selective contacts
Zhejiang Univ, Natl Engn Res Ctr Opt Instrumentat, Ctr Opt & Electromagnet Res, Hangzhou 310058, Zhejiang, Peoples R China..
Zhejiang Univ, Natl Engn Res Ctr Opt Instrumentat, Ctr Opt & Electromagnet Res, Hangzhou 310058, Zhejiang, Peoples R China.;Zhejiang Univ, Ningbo Res Inst, Ningbo 315100, Zhejiang, Peoples R China..
KTH, School of Engineering Sciences (SCI), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. KTH, School of Electrical Engineering and Computer Science (EECS). Zhejiang Univ, Natl Engn Res Ctr Opt Instrumentat, Ctr Opt & Electromagnet Res, Hangzhou 310058, Zhejiang, Peoples R China.;Zhejiang Univ, Ningbo Res Inst, Ningbo 315100, Zhejiang, Peoples R China..ORCID iD: 0000-0002-3401-1125
2019 (English)In: Nano Energy, ISSN 2211-2855, E-ISSN 2211-3282, Vol. 64, article id UNSP 103930Article in journal (Refereed) Published
Abstract [en]

Dopant-free carrier-selective contacts are emerging in the field of crystalline silicon (c-Si) photovoltaic solar cells, which are potential to further improve the power conversion efficiency (PCE) and lower the cost of c-Si solar cells. Here, we demonstrate tens of microns thin c-Si heterojunction solar cells with substochiometric MoOx and LiFx as dopant-free hole- and electron-selective contacts, respectively. Chemical thinning of 200-mu m thick c-Si wafers enables the production of proof of concept devices with good flexibility and strong performance. When the wafer thickness is reduced to 49.4 mu m (24.7% of the initial thickness), the power conversion efficiency (PCE) of the solar cell still maintains 88.2% of the initial value for the 200-mu m thick cell. When the wafer thickness becomes less than 10% (or even 3.4%) of the initial value, 61.2% and 39.2% of the initial PCEs are still achieved for the 14.8- and 6.8-mu m thick cells, respectively. Passivating and carrier-selective effects of the MoOx and LiFx films allow for the maintenance of performance. An oxide interlayer at the MoOx/c-Si interface passivates the dangling bonds of the c-Si surface and improves the minority carrier lifetime. Field-effect passivation and carrier-selective effects induced by the band bending near the MoOx/c-Si interface and the Al/LiFx/c-Si interface play an important role in maintaining high open-circuit voltage and high fill factor. To the best of our knowledge, this is the first time that <100-mu m thin c-Si heterojunction solar cells are reported with undoped contacts. Our solar cells have been fabricated on thin c-Si wafers with low-temperature processes and without additional doping, and thus our work provides a promising cost-effective means in the field of thin and flexible c-Si solar cells.

Place, publisher, year, edition, pages
ELSEVIER , 2019. Vol. 64, article id UNSP 103930
Keywords [en]
Crystalline silicon heterojunction solar cell, Dopant-free carrier-selective contacts, Thin wafer, Passivation, Band bending
National Category
Physical Sciences
Research subject
Physics, Material and Nano Physics
Identifiers
URN: urn:nbn:se:kth:diva-262783DOI: 10.1016/j.nanoen.2019.103930ISI: 000487931500042Scopus ID: 2-s2.0-85069922344OAI: oai:DiVA.org:kth-262783DiVA, id: diva2:1362995
Note

QC 20191022

Available from: 2019-10-22 Created: 2019-10-22 Last updated: 2019-11-26Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full textScopus

Authority records BETA

He, Sailing

Search in DiVA

By author/editor
He, Sailing
By organisation
Zhejiang-KTH Joint Research Center of Photonics, JORCEPSchool of Electrical Engineering and Computer Science (EECS)
In the same journal
Nano Energy
Physical Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 136 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf