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Suppression of short-channel effects in 4H-SIC trench MOSFETS
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2019 (English)In: Silicon Carbide and Related Materials 2018, Trans Tech Publications Ltd , 2019, p. 613-616Conference paper, Published paper (Refereed)
Abstract [en]

Submicron 4H-SiC MOSFETs are attractive for high frequency operation of 4H-SiC integrated circuits. However, the short channel effects, such as threshold voltage lowering, would be induced at the short-channel devices. In this work, short channel effects were investigated with planar and trench 4H-SiC MOSFETs, and the suppression of the short channel effect with the trench structure was achieved.

Place, publisher, year, edition, pages
Trans Tech Publications Ltd , 2019. p. 613-616
Series
Materials Science Forum, ISSN 1662-9752 ; 963
Keywords [en]
Harsh Environment Electronics, Short-Channel Effects, Trench MOSFETs, MOSFET devices, Threshold voltage, 4h-sic mosfets, Harsh environment, High frequency operation, Short-channel devices, Short-channel effect, Submicron, Trench structures, Silicon carbide
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-262431DOI: 10.4028/www.scientific.net/MSF.963.613Scopus ID: 2-s2.0-85071840627ISBN: 9783035713329 (print)OAI: oai:DiVA.org:kth-262431DiVA, id: diva2:1367465
Conference
12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018, 2-6 September 2018, Birmingham, United Kingdom
Note

QC 20191104

Available from: 2019-11-04 Created: 2019-11-04 Last updated: 2019-11-04Bibliographically approved

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Östling, MikaelZetterling, Carl-Mikael

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