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Silicon carbide BJT oscillator design using S-parameters
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.ORCID iD: 0000-0003-2540-8726
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.ORCID iD: 0000-0002-7845-3988
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.ORCID iD: 0000-0003-0565-9907
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.ORCID iD: 0000-0001-6459-749X
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2019 (English)In: Silicon Carbide and Related Materials 2018, Trans Tech Publications Ltd , 2019, p. 674-678Conference paper, Published paper (Refereed)
Abstract [en]

Radio frequency (RF) oscillator design typically requires large-signal, high-frequency simulation models for the transistors. The development of such models is generally difficult and time consuming due to a large number of measurements needed for parameter extraction. The situation is further aggravated as the parameter extraction process has to be repeated at multiple temperature points in order to design a wide-temperature range oscillator. To circumvent this modelling effort, an alternative small-signal, S-parameter based design method can be employed directly without going into complex parameter extraction and model fitting process. This method is demonstrated through design and prototyping a 58 MHz, high-temperature (HT) oscillator, based on an in-house 4H-SiC BJT. The BJT at elevated temperature (up to 300 °C) was accessed by on-wafer probing and connected by RF-cables to the rest of circuit passives, which were kept at room temperature (RT).

Place, publisher, year, edition, pages
Trans Tech Publications Ltd , 2019. p. 674-678
Series
Materials Science Forum, ISSN 1662-9752 ; 963
Keywords [en]
4H-SiC BJT, RF oscillator, S-parameters, Bipolar transistors, Design, Extraction, Parameter extraction, Silicon carbide, Silicon wafers, Elevated temperature, High frequency simulation, High temperature, Oscillator design, Radio frequencies, SiC BJT, Wide temperature ranges, Scattering parameters
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-262429DOI: 10.4028/www.scientific.net/MSF.963.674Scopus ID: 2-s2.0-85071839366ISBN: 9783035713329 (print)ISBN: 978-3-0357-3332-7 (electronic)OAI: oai:DiVA.org:kth-262429DiVA, id: diva2:1367505
Conference
12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham September 2-6, 2018.
Note

QC 20191104

Available from: 2019-11-04 Created: 2019-11-04 Last updated: 2019-11-04Bibliographically approved

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Hussain, Muhammad WaqarElahipanah, HosseinRodriguez, SaulMalm, B. GunnarRusu, Ana

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