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Bloch mode excitation in two-dimensional photonic crystals imaged by Fourier optics
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0003-2136-4914
Ecole Polytech Fed Lausanne, Inst Photon & Elect Quant.
Ecole Polytech Fed Lausanne, Inst Photon & Elect Quant.
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2009 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 79, no 16, 165116-1-165116-6 p.Article in journal (Refereed) Published
Abstract [en]

Coupling into the Bloch modes of a two-dimensional photonic crystal (PhC) field is investigated by Fourier optics. The PhC was designed to operate in the second band above the air-light line, close to the autocollimation regime for TE polarization. The sample was fabricated in an InP-based heterostructure and an access ridge waveguide provides in-plane excitation of the PhC. The spatial Fourier transform of the field maps obtained from finite-difference time-domain simulations and those calculated by plane-wave expansion are compared to the experimentally obtained equifrequency surfaces (EFS). The shape of the imaged EFS and its variation with the excitation wavelength is shown to be consistent with the theoretical simulations. Finally, the results indicate that if combined with different excitation geometries, Fourier optics can be a powerful technique to assess photonic crystal devices and to design efficient structures.

Place, publisher, year, edition, pages
2009. Vol. 79, no 16, 165116-1-165116-6 p.
Keyword [en]
excited states; finite difference time-domain analysis; Fourier transform optics; Fourier transforms; indium compounds; photonic crystals; LIGHT-PROPAGATION; GAP
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-8382DOI: 10.1103/PhysRevB.79.165116ISI: 000265945200038Scopus ID: 2-s2.0-66149179252OAI: oai:DiVA.org:kth-8382DiVA: diva2:13687
Note
QC 20100707. Uppdaterad från manuskript till artikel i tidskrift (20100707).Available from: 2008-05-08 Created: 2008-05-08 Last updated: 2010-07-12Bibliographically approved
In thesis
1. InP-based photonic crystals: Processing, Material properties and Dispersion effects
Open this publication in new window or tab >>InP-based photonic crystals: Processing, Material properties and Dispersion effects
2008 (English)Doctoral thesis, comprehensive summary (Other scientific)
Abstract [en]

Photonic crystals (PhCs) are periodic dielectric structures that exhibit a photonic bandgap, i.e., a range of wavelength for which light propagation is forbidden. The special band structure related dispersion properties offer a realm of novel functionalities and interesting physical phenomena. PhCs have been manufactured using semiconductors and other material technologies. However, InP-based materials are the main choice for active devices at optical communication wavelengths. This thesis focuses on two-dimensional PhCs in the InP/GaInAsP/InP material system and addresses their fabrication technology and their physical properties covering both material issues and light propagation aspects.

Ar/Cl2 chemically assisted ion beam etching was used to etch the photonic crystals. The etching characteristics including feature size dependent etching phenomena were experimentally determined and the underlying etching mechanisms are explained. For the etched PhC holes, aspect ratios around 20 were achieved, with a maximum etch depth of 5 microns for a hole diameter of 300 nm. Optical losses in photonic crystal devices were addressed both in terms of vertical confinement and hole shape and depth. The work also demonstrated that dry etching has a major impact on the properties of the photonic crystal material. The surface Fermi level at the etched hole sidewalls was found to be pinned at 0.12 eV below the conduction band minimum. This is shown to have important consequences on carrier transport. It is also found that, for an InGaAsP quantum well, the surface recombination velocity increases (non-linearly) by more than one order of magnitude as the etch duration is increased, providing evidence for accumulation of sidewall damage. A model based on sputtering theory is developed to qualitatively explain the development of damage.

The physics of dispersive phenomena in PhC structures is investigated experimentally and theoretically. Negative refraction was experimentally demonstrated at optical wavelengths, and applied for light focusing. Fourier optics was used to experimentally explore the issue of coupling to Bloch modes inside the PhC slab and to experimentally determine the curvature of the band structure. Finally, dispersive phenomena were used in coupled-cavity waveguides to achieve a slow light regime with a group index of more than 180 and a group velocity dispersion up to 10^7 times that of a conventional fiber.

Place, publisher, year, edition, pages
Stockholm: KTH, 2008. xv, 115 p.
Series
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2008:7
Keyword
Photonic crystals, indium phosphide, photonic bandgap, Bloch modes, slow light, dispersion, coupled cavity waveguides, chemically assisted ion beam etching, lag effect, cavities, optical losses, carrier transport, carrier lifetimes, negative refraction, photonic bandstructure
National Category
Physical Sciences
Identifiers
urn:nbn:se:kth:diva-4734 (URN)978-91-7178-969-3 (ISBN)
Public defence
2008-05-30, N1, Electrum 3, Kista, 10:00
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Note
QC 20100712Available from: 2008-05-08 Created: 2008-05-08 Last updated: 2010-07-12Bibliographically approved

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