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Influence of a thin amorthous layer on de-channeling during aluminum implantation at different temperatures into 4H-SiC
KTH, School of Engineering Sciences (SCI), Applied Physics, Materials and Nanophysics.ORCID iD: 0000-0002-0292-224x
KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electronics and Embedded systems, Integrated devices and circuits.ORCID iD: 0000-0002-8760-1137
Univ Oslo, Phys Dept, Ctr Mat Sci & Nanotechnol, POB 1048, N-0316 Oslo, Norway.
2019 (English)In: Applied Physics A: Materials Science & Processing, ISSN 0947-8396, E-ISSN 1432-0630, Vol. 125, no 12, article id 849Article in journal (Refereed) Published
Abstract [en]

Ion implantation is an important technique in semiconductor processing and has become a key technology for 4H-SiC devices. Today, aluminum (Al) implantations are routinely used for p-type contacts, p(+)-emitters, terminations and many other applications. However, in all crystalline materials, quite a few ions find a path along a crystal channel, so-called channeling, and these ions travel deep into the crystal. This paper reports on the channeling phenomenon during Al implantation into 4H-SiC, and in particular, the influence of a thin native oxide will be discussed in detail. The effects of thermal lattice vibrations for implantations performed at elevated temperatures will also be elucidated. 100 keV Al ions have been implanted along the [000-1] direction employing samples with 4 degrees miscut. Before implantation, the samples have been aligned using the blocking pattern of backscattered protons. Secondary ion mass spectrometry has been used to record the Al depth distribution. To predict implantation profiles and improve understanding of the role of crystal structure, simulations were performed using the Monte-Carlo binary collision approximation code SIIMPL. Our results show that a thin surface layer of native oxide, less than 1 nm, has a decisive role for de-channeling of aligned implantations. Further, as expected, for implantations at elevated temperatures, a larger degree of de-channeling from major axes is present due to increased thermal vibrations and the penetration depth of channeled aluminum ions is reduced. The values for the mean-square atomic displacements at elevated temperatures have been extracted from experimental depth profiles in combination with simulations.

Place, publisher, year, edition, pages
Springer Berlin/Heidelberg, 2019. Vol. 125, no 12, article id 849
National Category
Physical Sciences Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-264238DOI: 10.1007/s00339-019-3144-1ISI: 000498210100003Scopus ID: 2-s2.0-85075212151OAI: oai:DiVA.org:kth-264238DiVA, id: diva2:1372612
Funder
Swedish Research Council, E0510501Swedish Research Council, 821-2012-5144Swedish Research Council, 2017-00646-9Swedish Foundation for Strategic Research , RIF14-0053The Research Council of Norway, 251131The Research Council of Norway, 245963
Note

QC 20191216

Available from: 2019-11-25 Created: 2019-11-25 Last updated: 2020-01-02Bibliographically approved

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Hallén, Anders

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