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Recent advances in the doping of 4H-SiC by channeling ion implantation
KTH, School of Electrical Engineering and Computer Science (EECS).ORCID iD: 0000-0002-8760-1137
KTH, School of Engineering Sciences (SCI), Applied Physics, Materials and Nanophysics.ORCID iD: 0000-0002-0292-224x
2019 (English)In: Silicon Carbide and Related Materials 2018, Trans Tech Publications Inc., 2019, Vol. 963, p. 375-381Conference paper, Published paper (Refereed)
Abstract [en]

The effect of lattice thermal vibrations on the channeling of 100 keV Al ions in 4H-SiC is investigated. By implanting at room temperature in the direction, the depth distribution of the incident ions is shown to be about 7 times deeper than for random implantations. At higher implantation temperatures, the channeling is reduced by the lattice vibrations and, for instance, at 600 °C implantation the distribution is about 3-4 times deeper than for a RT random implantation. The results are of technological interest for further development of implantation technology for 4H-SiC device manufacturing.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2019. Vol. 963, p. 375-381
Series
Materials Science Forum, ISSN 0255-5476 ; 963
National Category
Physical Sciences Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-264360DOI: 10.4028/www.scientific.net/MSF.963.375Scopus ID: 2-s2.0-85071888219ISBN: 9783035713329 (print)OAI: oai:DiVA.org:kth-264360DiVA, id: diva2:1373095
Conference
12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018; Birmingham; United Kingdom; 2 September 2018 through 6 September 2018
Note

QC 20191205

Available from: 2019-11-26 Created: 2019-11-26 Last updated: 2019-12-05Bibliographically approved

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Hallén, Anders

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