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Semiconductor-Metal-Grating Slow Wave Amplifier for Sub-THz Frequency Range
KTH, School of Electrical Engineering and Computer Science (EECS), Intelligent systems, Micro and Nanosystems.ORCID iD: 0000-0002-9746-1537
KTH, School of Electrical Engineering and Computer Science (EECS), Intelligent systems, Micro and Nanosystems.ORCID iD: 0000-0003-1443-403x
KTH, School of Electrical Engineering and Computer Science (EECS), Intelligent systems, Micro and Nanosystems.ORCID iD: 0000-0003-3339-9137
2019 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 66, no 10, p. 4413-4418Article in journal (Refereed) Published
Abstract [en]

The concept of semiconductor slow wave amplifier aimed at sub-terahetz frequencies is studied numerically. The scheme of the transversal amplifier with metal grating is proposed. The requirements on semiconductor parameters that provide positive net amplification are given and discussed, and the choice of GaN is explained. For the proposed device, different regimes are studied, and the dependence of the net amplification on device parameters is given. One regime has high linear gain, more than 50 dB/mm. The proof-of-principle structure for the excitation of the device in this regime is proposed and simulated.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 2019. Vol. 66, no 10, p. 4413-4418
Keywords [en]
Microwave amplifiers, plasmons, semiconductor devices, terahertz (THz) radiation
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-264288DOI: 10.1109/TED.2019.2935312ISI: 000487477600047Scopus ID: 2-s2.0-85077745631OAI: oai:DiVA.org:kth-264288DiVA, id: diva2:1374843
Note

QC 20191203

Available from: 2019-12-03 Created: 2019-12-03 Last updated: 2020-02-04Bibliographically approved

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Makhalov, Petr B.Lioubtchenko, DmitriOberhammer, Joachim

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