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Highly transparent nickel and iron sulfide on nitrogen-doped carbon films as counter electrodes for bifacial quantum dot sensitized solar cells
Dalian Univ Technol, State Key Lab Fine Chem, Dalian 116024, Peoples R China.;Hunan Inst Technol, Dept Mat & Chem Engn, Hengyang 421002, Peoples R China..
Dalian Univ Technol, State Key Lab Fine Chem, Dalian 116024, Peoples R China..
Cent S Univ, Dept Chem & Chem Engn, Changsha 410083, Hunan, Peoples R China..
Dalian Univ Technol, State Key Lab Fine Chem, Dalian 116024, Peoples R China.ORCID iD: 0000-0002-4521-2870
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2019 (English)In: Solar Energy, ISSN 0038-092X, E-ISSN 1471-1257, Vol. 193, p. 766-773Article in journal (Refereed) Published
Abstract [en]

Semiconductors are widely used as counter electrodes in quantum dot-sensitized solar cells. However, many counter electrode materials have poor conductivity and require tedious post-treatment procedures. Here, our groups develop a highly transparent MS2@N-doped C film materials (M = Ni, Fe) derived from layer-by-layer self-assembly of a M-TCPP film as a counter electrode in bifacial CdS/CdSe quantum dot-sensitized solar cells. Devices based on the MS2@N-doped C films exhibited higher respective front- and reverse-side power conversion efficiencies (i.e., 4.57% and 3.98% for the NiS2@N-doped C film and 3.18% and 2.63% for the FeS2@N-doped C film) than those of Pt-based devices (2.39% and 1.74%). We attribute the outstanding catalytic activity and excellent stability of the MS2@N-doped C film materials to the homogeneous sulfides within the transparent nitrogen-doped C film, as confirmed by electrochemical analyses, including cycle voltammetry, impedance spectroscopy and Tafel-polarization measurements.

Place, publisher, year, edition, pages
Pergamon Press, 2019. Vol. 193, p. 766-773
Keywords [en]
Metal sulfide, Nitrogen doped C film, Quantum dot-sensitized solar cells, Counter electrode
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-265486DOI: 10.1016/j.solener.2019.10.023ISI: 000498747800072Scopus ID: 2-s2.0-85073523823OAI: oai:DiVA.org:kth-265486DiVA, id: diva2:1378626
Note

QC 20191213

Available from: 2019-12-13 Created: 2019-12-13 Last updated: 2020-01-09Bibliographically approved

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