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The Growth of Graphene on Ni-Cu Alloy Thin Films at a Low Temperature and Its Carbon Diffusion Mechanism
Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Beijing 100124, Peoples R China..
Chalmers Univ Technol, Dept Ind & Mat Sci, S-41296 Gothenburg, Sweden..
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering. Thermo-Calc Software AB, Råsundavägen 18, Solna, 16967, Sweden.ORCID iD: 0000-0002-8493-9802
Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Beijing 100124, Peoples R China..
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2019 (English)In: Nanomaterials, ISSN 2079-4991, Vol. 9, no 11, article id 1633Article in journal (Refereed) Published
Abstract [en]

Carbon solid solubility in metals is an important factor affecting uniform graphene growth by chemical vapor deposition (CVD) at high temperatures. At low temperatures, however, it was found that the carbon diffusion rate (CDR) on the metal catalyst surface has a greater impact on the number and uniformity of graphene layers compared with that of the carbon solid solubility. The CDR decreases rapidly with decreasing temperatures, resulting in inhomogeneous and multilayer graphene. In the present work, a Ni-Cu alloy sacrificial layer was used as the catalyst based on the following properties. Cu was selected to increase the CDR, while Ni was used to provide high catalytic activity. By plasma-enhanced CVD, graphene was grown on the surface of Ni-Cu alloy under low pressure using methane as the carbon source. The optimal composition of the Ni-Cu alloy, 1:2, was selected through experiments. In addition, the plasma power was optimized to improve the graphene quality. On the basis of the parameter optimization, together with our previously-reported, in-situ, sacrificial metal-layer etching technique, relatively homogeneous wafer-size patterned graphene was obtained directly on a 2-inch SiO2/Si substrate at a low temperature (similar to 600 degrees C).

Place, publisher, year, edition, pages
MDPI , 2019. Vol. 9, no 11, article id 1633
Keywords [en]
transfer-free, lithography-free, graphene, chemical vapor deposition, insulating substrate, low temperature growth
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-266236DOI: 10.3390/nano9111633ISI: 000502271700128PubMedID: 31744237Scopus ID: 2-s2.0-85075273340OAI: oai:DiVA.org:kth-266236DiVA, id: diva2:1382480
Note

QC 20200103

Available from: 2020-01-03 Created: 2020-01-03 Last updated: 2020-01-03Bibliographically approved

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Mao, Huahai

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