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Impact of blanking time on switching losses in a SiC MOSFET-based converter using capacitive snubbers
KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electric Power and Energy Systems.ORCID iD: 0000-0003-0570-9599
KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electric Power and Energy Systems.
KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electric Power and Energy Systems.ORCID iD: 0000-0002-1755-1365
2019 (English)In: 2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe, Institute of Electrical and Electronics Engineers (IEEE), 2019, article id 8915564Conference paper, Published paper (Refereed)
Abstract [en]

Wide Bandgap power semiconductors such as SiC MOSFETs, have enabled compact and highly efficient power converters operated at higher frequencies. In converters using SiC MOSFETs and capacitive snubbers, the blanking times may have a significant impact on switching losses. The power losses induced by unnecessary long blanking times have been quantified experimentally. It was found that, at 100 kHz, an adaptive blanking time can reduce the losses by more than 20 %. As those losses are directly proportional to the switching frequency, an adaptive blanking time is essential when designing for high operation frequencies. Doing so, higher operation frequencies are possible while maintaining a high efficiency.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2019. article id 8915564
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-266875DOI: 10.23919/EPE.2019.8915564Scopus ID: 2-s2.0-85076714022ISBN: 9789075815313 (print)OAI: oai:DiVA.org:kth-266875DiVA, id: diva2:1388358
Conference
21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe; Genova; Italy; 3 September 2019 through 5 September 2019
Note

QC 20200124

Available from: 2020-01-24 Created: 2020-01-24 Last updated: 2020-01-24Bibliographically approved

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Ranstad, PerNee, Hans-Peter

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