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Large-scale Integration of 2D Material Heterostructures by Adhesive Bonding
KTH, School of Electrical Engineering and Computer Science (EECS), Intelligent systems, Micro and Nanosystems.ORCID iD: 0000-0003-3936-818X
KTH, School of Electrical Engineering and Computer Science (EECS), Intelligent systems, Micro and Nanosystems.
(AMO GmbH, Advanced Microelectronic Center Aachen (AMICA), Aachen, GERMANY)
(Protemics GmbH, Aachen, GERMANY; Chair of Electronic Devices, RWTH Aachen University, Aachen, GERMANY)
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2020 (English)Conference paper, Published paper (Refereed)
Abstract [en]

We report the integration of graphene/hexagonal boron nitride (hBN) heterostructure devices on large-areas by adhesive wafer bonding, a method suitable for industrial mass-production. In this new approach, we stack graphene and hBN by two consecutive bond transfers whereby the graphene and its interface to hBN is not in contact with potentially contaminating polymers or adhesives at any time. To show the feasibility of our approach for back end of the line (BEOL) integration of two-dimensional (2D) material heterostructures on standard silicon substrates, we fabricated graphene/hBN devices with electrical bottom contacts using only established semiconductor manufacturing tools, processes and materials.

Place, publisher, year, edition, pages
2020.
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electrical Engineering; Physics, Material and Nano Physics
Identifiers
URN: urn:nbn:se:kth:diva-268942OAI: oai:DiVA.org:kth-268942DiVA, id: diva2:1396872
Conference
33rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2019)
Available from: 2020-02-26 Created: 2020-02-26 Last updated: 2020-02-26

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