High-performance 1.3-μm InGaAs vertical cavity surface emitting lasers
2003 (English)In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 39, no 15, 1128-1129 p.Article in journal (Refereed) Published
A report is presented on high-performance InGaAs/GaAs double quantum well vertical cavity surface emitting lasers (VCSELs) with record long emission wavelengths up to 1300 nm. Due to a large gain-cavity detuning these VCSELs show excellent temperature performance with very stable threshold current and output power characteristics. For 1.27 mum singlemode devices the threshold current is found to decrease from 2 to 1 mA between 10 and 90degreesC, while the peak output power only drops from 1 to 0.6 mW Large-area 1300 nm VCSELs show multimode output power close to 3 mW.
Place, publisher, year, edition, pages
2003. Vol. 39, no 15, 1128-1129 p.
Electric currents; Photoluminescence; Semiconducting gallium arsenide; Semiconducting indium compounds; Vertical cavity surface emitting lasers (VCSEL)
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-8620DOI: 10.1049/el:20030733ISI: 000184642900023OAI: oai:DiVA.org:kth-8620DiVA: diva2:13992
QC 201008252008-06-032008-06-032010-08-25Bibliographically approved