Fabrication and performance of 1.3-μm vertical cavity surface emitting lasers with InGaAs quantum well active regions grown on GaAs substrates
2004 (English)In: Proceedings of SPIE, the International Society for Optical Engineering, ISSN 0277-786X, Vol. 5443, 229-239 p.Article in journal (Refereed) Published
We describe the development of long-wavelength InGaAs/GaAs vertical-cavity surface emitting lasers (VCSELs). Using highly strained double-quantum wells (DQWs) in combination with negative gain-cavity detuning we have been able to realise such VCSELs with emission wavelength up to 1300 nm. High-performance device characteristics include mW-range output power, mA-range threshold currents, 10 Gbit/s data transmission and very good temperature stability with continuous-wave operation up to at least 140degreesC. Singlemode emission is realised using an integrated mode filter consisting of a patterned silicon layer on the out-coupling mirror surface, yielding output power and threshold currents for 1270-nm devices of 1.2 - 0.5 mW and 2.3 - 0.6 mA, respectively, over a temperature interval of 10 - 140degreesC. Multimode devices have been found to deliver more than 2 mW at 1290 nm. Preliminary lifetime measurements do not reveal any intrinsic reliability problems related to the highly strained quantum wells.
Place, publisher, year, edition, pages
2004. Vol. 5443, 229-239 p.
long wavelength; vertical cavity laser; InGaAs quantum well
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-8621DOI: 10.1117/12.547272ISI: 000224368500022ScopusID: 2-s2.0-12344323707OAI: oai:DiVA.org:kth-8621DiVA: diva2:13993
QC 201008252008-06-032008-06-032011-11-01Bibliographically approved