Single-mode 1.27 μm InGaAs vertical cavity surface-emitting lasers with temperature-tolerant modulation characteristics
2005 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 86, no 21, 211109-1-211109-3 p.Article in journal (Refereed) Published
The dynamic performance of InGaAs/GaAs 1.27 μ m single-mode vertical cavity surface emitting lasers (VCSELs) is presented. In order to reach such a long wavelength, the devices utilize highly strained double-quantum wells and a large detuning between the material gain peak and cavity resonance. It is found that the large detuning improves the temperature stability of both static and modulation characteristics. A resonance frequency of 7.8-9.5 GHz and optical power of 0.30 mW in fiber was maintained throughout the investigated temperature range of 20-90 &DEG; C. The intrinsic response of the device suggests that long-wavelength InGaAs/GaAs VCSELs have the potential to be used as low cost uncooled optical transmitters at 10 Gbit/s. © 2005 American Institute of Physics. © 2005 American Institute of Physics.
Place, publisher, year, edition, pages
2005. Vol. 86, no 21, 211109-1-211109-3 p.
Dispersion (waves); Modulation; Resonance; Semiconducting indium gallium arsenide; Semiconductor quantum wells; Thermodynamic stability; Optical transmitters; Resonance frequency; Surface emitting lasers; Temperature tolerant modulation characteristics
Atom and Molecular Physics and Optics
IdentifiersURN: urn:nbn:se:kth:diva-8623DOI: 10.1063/1.1935755ISI: 000229544200009ScopusID: 2-s2.0-20844447649OAI: oai:DiVA.org:kth-8623DiVA: diva2:13995
QC 201007072008-06-032008-06-032010-08-25Bibliographically approved