Optical loss and interface morphology in AlGaAs/GaAs distributed Bragg reflectors
2007 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 91, no 10, 101101- p.Article in journal (Refereed) Published
It is shown that n-type doping of AlGaAs/GaAs distributed Bragg reflectors (DBRs) grown by metal-organic vapor-phase epitaxy has a profound negative impact on the performance of vertical-cavity surface-emitting lasers (VCSELs) based on such mirrors. Using an intracavity contact scheme, 1.3-mu m-range InGaAs VCSELs with and without doping in the bottom DBR are directly compared. Doped mirrors lead to lower slope efficiency, lower output power, and higher threshold current. From x-ray diffraction, high-accuracy reflectance measurements, and atomic force microscopy studies, it is suggested that this performance degradation is due to the doping-enhanced Al-Ga interdiffusion, leading to interface roughening and increased scattering loss.
Place, publisher, year, edition, pages
2007. Vol. 91, no 10, 101101- p.
Metallorganic vapor phase epitaxy; Optical losses; Semiconducting aluminum compounds; Semiconductor doping; Surface emitting lasers; X ray diffraction; High-accuracy reflectance measurements; Interface morphology; Vertical-cavity surface-emitting lasers (VCSELs)
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-8625DOI: 10.1063/1.2779242ISI: 000249322900001ScopusID: 2-s2.0-34548480155OAI: oai:DiVA.org:kth-8625DiVA: diva2:13997
QC 201008252008-06-032008-06-032014-12-08Bibliographically approved