High-power InGaAs/GaAs 1.3 μm VCSELs based on novel electrical confinement scheme
2008 (English)In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 44, no 6, 414-416 p.Article in journal (Refereed) Published
Reported are 1.3 mu m InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) with a novel electrical confinement scheme based on lithographic definition and selective area epitaxial regrowth in the cavity region. More than 6 mW of output power with a record high differential efficiency of more than 70% is emitted from 10 mu m large devices.
Place, publisher, year, edition, pages
2008. Vol. 44, no 6, 414-416 p.
Epitaxial growth; Lithography; Semiconducting indium gallium arsenide; Cavity region; Differential efficiency; Electrical confinement scheme
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-8626DOI: 10.1049/el:20080056ISI: 000254797500016ScopusID: 2-s2.0-40749119753OAI: oai:DiVA.org:kth-8626DiVA: diva2:13998
QC 201008252008-06-032008-06-032010-08-25Bibliographically approved