Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Large mask area effects in selective area growth
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0977-2598
2006 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 289, no 1, 24-30 p.Article in journal (Refereed) Published
Abstract [en]

In this paper we analyze for the first time selective area growth (SAG) of GaAs by MOVPE on dark field patterns, where the different masking features are dense and at the same time the openings are surrounded by very large mask area (larger than the openings) in all directions. The growth efficiency as a function of filling factors is analyzed using one- and two-dimensional filling factors. That the SAG efficiency cannot be greater than one is found to be true, if a two-dimensional filling factor is employed; this treatment involves three-dimensional transport of the growth rendering species. Finite element method has been used to derive the longitudinal thickness profile in the openings by considering the three-dimensional model. The derived longitudinal thickness profile is found to fit very well with the experimentally measured profile. The diffusion length of the growth rendering species is also extracted from the above profile. For comparison, light field patterns are also treated. Our analysis confirms many previous observations that SAG in the light field patterns can be sufficiently explained by the two-dimensional model.

Place, publisher, year, edition, pages
2006. Vol. 289, no 1, 24-30 p.
Keyword [en]
metalorganic vapor phase epitaxy, selective epitaxy, gallium arsenide
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-8656DOI: 10.1016/j.jcrysgro.2005.10.130ISI: 000236163000005Scopus ID: 2-s2.0-33244497117OAI: oai:DiVA.org:kth-8656DiVA: diva2:14036
Note
QC 20100902Available from: 2008-06-04 Created: 2008-06-04 Last updated: 2017-12-14Bibliographically approved
In thesis
1. Selective Epitaxy of Indium Phosphide and Heteroepitaxy of Indium Phosphide on Silicon for Monolithic Integration
Open this publication in new window or tab >>Selective Epitaxy of Indium Phosphide and Heteroepitaxy of Indium Phosphide on Silicon for Monolithic Integration
2008 (English)Doctoral thesis, comprehensive summary (Other scientific)
Abstract [en]

A densely and monolithically integrated photonic chip on indium phosphide is greatly in need for data transmission but the present day’s level of integration in InP is very low. Silicon enjoys a unique position among all the semiconductors in its level of integration. But it suffers from its slow signal transmission between the circuit boards and between the chips as it uses conventional electronic wire connections. This being the bottle-neck that hinders enhanced transmission speed, optical-interconnects in silicon have been the dream for several years. Suffering from its inherent deficient optical properties, silicon is not supposed to offer this feasibility in the near future. Hence, integration of direct bandgap materials, such as indium phosphide on silicon, is one of the viable alternatives. This thesis addresses these two issues, namely monolithic integration on indium phosphide and monolithic integration of indium phosphide on silicon. To this end, we use two techniques, namely selective epitaxy and heteroepitaxy by employing hydride vapor phase epitaxy method.

The first part deals with the exploitation of selective epitaxy for fabricating a discrete and an integrated chip based on InP. The former is a multi-quantum well buried heterostructure laser emitting at 1.55 µm that makes use of AlGaInAs and InGaAsP as the barrier and well, respectively. We demonstrate that even though it contains Al in the active region, semi-insulating InP:Fe can be regrown. The lasers demonstrate threshold as low as 115A/cm2/quantum well, an external quantum efficiency of 45% and a characteristic temperature of 78 K, all at 20 oC. Concerning the integrated device, we demonstrate complex and densely packed buried arrayed waveguide (AWG) structures found in advanced systems-on-the-chip for optical code-division multiple-access (O-CDMA). We present a case of an error-free 10 Gb/s encoding and decoding operation from an eight-channel AWGs with 180 GHz channel spacing. Selective epitaxial growth aspects specific to these complicated structures are also described and guidance on design implementation of these AWGs is given. Mass transport studies on these AWGs are also presented.

The second part deals with various studies on and relevant to epitaxial lateral overgrowth (ELOG) of high quality InP on silicon. (i) ELOG often encounters cases where most part of the surface is covered by mask. From the modeling on large mask area effects, their impact on the transport and kinetic properties has been established. (ii) It is known that ELOG causes strain in the materials. From synchrotron X-ray measurements, strain is shown to have large effect on the mask edges and the underlying substrate. (iii) The combination of strain and the influence of image forces when reducing the opening dimensions in ELOG has been modeled. It is found to be very beneficial to reduce openings down to ~100 nm where effective filtering of dislocations is predicted to take place even in vicinity of the openings. We call it nano-ELOG. (iv) By combining the modeling results of nano-ELOG and of a pre-study of ELOG on pure InP, a novel net pattern design is invented and experimented for nano-ELOG of InP on Si. PL measurements together with transmission electron microscopy observations indicate beneficial effects of small size openings (200 nm) compared to 1000 nm openings. (v) ELOG of InP on silicon-on-insulators together with a multi-quantum well structure grown on it has been demonstrated for the first time. This is particularly interesting for integrating silicon/silicon dioxide waveguides with InP.

Place, publisher, year, edition, pages
Stockholm: KTH, 2008. xii, 90 p.
Series
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2008:11
Keyword
Semiconductor Physics
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kth:diva-4801 (URN)978-91-7178-991-4 (ISBN)
Public defence
2008-06-13, N2, School of Information and Communication Technology, Electrum 3, Isafjordsgatan 28 A/D, Kista, 10:15
Opponent
Supervisors
Note
QC 20100902Available from: 2008-06-04 Created: 2008-06-04 Last updated: 2010-09-02Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Authority records BETA

Lourdudoss, Sebastian

Search in DiVA

By author/editor
Olsson, FredrikZhu, TiankaiMion, GaëlLourdudoss, Sebastian
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
Journal of Crystal Growth
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 63 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf