Large mask area effects in selective area growth
2006 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 289, no 1, 24-30 p.Article in journal (Refereed) Published
In this paper we analyze for the first time selective area growth (SAG) of GaAs by MOVPE on dark field patterns, where the different masking features are dense and at the same time the openings are surrounded by very large mask area (larger than the openings) in all directions. The growth efficiency as a function of filling factors is analyzed using one- and two-dimensional filling factors. That the SAG efficiency cannot be greater than one is found to be true, if a two-dimensional filling factor is employed; this treatment involves three-dimensional transport of the growth rendering species. Finite element method has been used to derive the longitudinal thickness profile in the openings by considering the three-dimensional model. The derived longitudinal thickness profile is found to fit very well with the experimentally measured profile. The diffusion length of the growth rendering species is also extracted from the above profile. For comparison, light field patterns are also treated. Our analysis confirms many previous observations that SAG in the light field patterns can be sufficiently explained by the two-dimensional model.
Place, publisher, year, edition, pages
2006. Vol. 289, no 1, 24-30 p.
metalorganic vapor phase epitaxy, selective epitaxy, gallium arsenide
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-8656DOI: 10.1016/j.jcrysgro.2005.10.130ISI: 000236163000005ScopusID: 2-s2.0-33244497117OAI: oai:DiVA.org:kth-8656DiVA: diva2:14036
QC 201009022008-06-042008-06-042010-09-02Bibliographically approved