Heteroepitaxy of InP on Silicon-on-Insulator for Optoelectronic Integration
2007 (English)In: ECS Transactions, ISSN 1938-5862, Vol. 3, no 39, 23-29 p.Article in journal (Refereed) Published
Epitaxial lateral overgrowth of InP was performed on patterned silicon-on-insulator (SOI) and compared with that on Si substrates in a low pressure hydride vapor phase epitaxy system. The InP was characterized by cathodoluminescence. No red shift of peak wavelength was detected for InP/SOI indicating a negligible thermal strain. Additional low energy peaks were found in some regions with a granular structure on the SOI template. A subsequent growth of an InGaAsP/InP MQW (multi quantum well) structure (λ∼1.5 μm) was grown on the SOI template and on a planar InP reference sample by metal-organic phase epitaxy. The MQW was characterized by room temperature photoluminescence. A red shift of 35 nm with respect to the reference sample was attributed to the selective-area effect causing thicker wells and/or an increased indium content. Although the PL intensity was weaker than that obtained for the reference, the FWHMs were comparable.
Place, publisher, year, edition, pages
2007. Vol. 3, no 39, 23-29 p.
area effect, Electrochemical Society (ECS), Epitaxial lateral overgrowth (ELOG), Granular structures, Hetero-epitaxy, Hydride vapor-phase epitaxy (HVPE), indium content, InGaAsP/InP, Low pressure (LP), Low-energy peaks, Metal organic (MO), Multi quantum well (MQW), on Patterned Silicon (GPS), Optoelectronic integrations, Peak wavelengths, Photoluminescence (PL) intensity, red shifting, Room Temperature Photoluminescence (RT-PL), Si(2 1 1) substrates, Silicon on insulator (SOI), Astrophysics, Blood vessel prostheses, Computer networks, Crystal growth, Doppler effect, Epitaxial growth, Light emission, Luminescence, Microsensors, Molecular beam epitaxy, Nonmetals, Optical sensors, Photonics, Semiconductor quantum wells, Silicon
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-8657DOI: 10.1149/1.2818558ScopusID: 2-s2.0-43249115741OAI: oai:DiVA.org:kth-8657DiVA: diva2:14037
QC 201009022008-06-042008-06-042010-09-02Bibliographically approved