Crystal Defects and Strain of Epitaxial InP Layers Laterally Overgrown on Si
2006 (English)In: Crystal Growth & Design, ISSN 1528-7483, E-ISSN 1528-7505, Vol. 6, no 5, 1096-1100 p.Article in journal (Refereed) Published
Defects in epitaxial laterally overgrown (ELO) InP layers are examined by high-resolution X-ray diffraction and synchrotron X-ray back-reflection and transmission topography. X-ray diffraction maps produce information about the overall crystal quality of the epitaxial layers in the InP ELO sample. The topographs show small angle boundaries, and the associated dislocations are located at the boundaries between the crystallites; allowing for their relative tilt, the maximum value for this is 0.06 degrees. No defects inside the crystallites can be seen in the topographs, except for a small bending of 0.04 degrees at most, of the ELO lattice planes. The section topographs show deformed X-ray interference fringes resulting from the large strain of the silicon lattice below the seeding areas.
Place, publisher, year, edition, pages
2006. Vol. 6, no 5, 1096-1100 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-8658DOI: 10.1021/cg0503301ISI: 000237420100011ScopusID: 2-s2.0-33744731759OAI: oai:DiVA.org:kth-8658DiVA: diva2:14038
QC 201009022008-06-042008-06-042010-09-02Bibliographically approved