Epitaxial lateral overgrowth of InP in micro line and submicro mesh openings
2007 (English)In: 2007 International Conference on Indium Phosphide and Related Materials, 2007, 311-314 p.Conference paper (Refereed)
Towards achieving a large area of InP on silicon, a study of ELOG of InP on InP has been undertaken on lines with different orientations and with openings that are 100 mu m long and 10 gm wide. This knowledge has been transposed on sub-micro mesh structures. By this method we have obtained 2 gm thick InP on a mesh patterned InP. The layer exhibits room temperature photoluminescence (PL) with a full width half maximum of 24 nm. We propose that this intensity can be increased if nano-sized openings are used.
Place, publisher, year, edition, pages
2007. 311-314 p.
, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, ISSN 1092-8669
Epitaxial growth, Photoluminescence, Silicon, Temperature measurement, Epitaxial lateral overgrowth, Submicro mesh structures
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-8659DOI: 10.1109/ICIPRM.2007.381186ISI: 000248523100082ScopusID: 2-s2.0-34748886143OAI: oai:DiVA.org:kth-8659DiVA: diva2:14039
QC 201009022008-06-042008-06-042010-09-02Bibliographically approved