Epitaxial lateral overgrowth of InP on Si from nano-openings: Theoretical and experemintal indication for defect filtering throughout the grown layer
2008 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 104, no 9, 093112-1-093112-6 p.Article in journal (Refereed) Published
We present a model for the filtration of dislocations inside the seed window in epitaxial lateral overgrowth (ELO). We found that, when the additive effects of image and gliding forces exceed the defect line tension force, filtering can occur even in the openings. The model is applied to ELO of InP on Si where the opening size and the thermal stress arising due to the mask and the grown material are taken into account and analyzed. Further, we have also designed the mask patterns in net structures, where the tilting angles of the openings in the nets are chosen in order to take advantage of the filtering in the openings more effectively, and to minimize new defects due to coalescence in the ELO. Photoluminescence intensities of ELO InP on Si and on InP are compared and found to be in qualitative agreement with the model.
Place, publisher, year, edition, pages
2008. Vol. 104, no 9, 093112-1-093112-6 p.
DISLOCATION DENSITY REDUCTION, PHASE EPITAXY, SUBSTRATE, GAAS
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-8660DOI: 10.1063/1.2977754ISI: 000260941700013ScopusID: 2-s2.0-56349123893OAI: oai:DiVA.org:kth-8660DiVA: diva2:14040
QC 20100902. Uppdaterad från submitted till published (20100902).2008-06-042008-06-042010-09-02Bibliographically approved