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RE (La, Nd and Yb) doped CeO2 abrasive particles for chemical mechanical polishing of dielectric materials: Experimental and computational analysis
Tsinghua Univ, State Key Lab Tribol, Beijing 100084, Peoples R China.;Beijing Inst Technol, Sch Mech & Vehicular Engn, Laser Micro Nano Fabricat Lab, Beijing 100081, Peoples R China..
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Applied Material Physics.
Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China..
Tsinghua Univ, State Key Lab Tribol, Beijing 100084, Peoples R China..
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2020 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 506, article id 144668Article in journal (Refereed) Published
Abstract [en]

Ce3+ in CeO2, rather than Ce4+, is believed to provide assistance to the breaking up of Si-O bond during chemical mechanical polishing (CMP) of silica. In the paper, lanthanide metals (La, Nd and Yb) doped CeO2 nanoparticles were synthesized by modified incipient impregnation method in order to improve the content of Ce3+ in CeO2 as polishing. X-ray photoelectron spectroscopy (XPS) experiments and density function theory (DFT) calculation demonstrate this approach could achieve surface doping of CeO2 nanoparticles, and facilitates the formation of oxygen vacancy and Ce3+ content. CMP experiments show that the polishing rate and the surface quality of silica wafer are obviously improved by using the doped CeO2 as abrasive particles. Especially for Nd/CeO2, content of Ce3+ increases from 0.146 to 0.235, the polishing rate of silica is accelerated by 29.6% in alkaline slurries, and a better surface quality (Sa = 9.6 angstrom) is obtained.

Place, publisher, year, edition, pages
ELSEVIER , 2020. Vol. 506, article id 144668
Keywords [en]
Ceria (CeO2), Incipient impregnation, Surface doping, Chemical mechanical polishing (CMP), Lanthanide elements, Density functional theory (DFT)
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-269445DOI: 10.1016/j.apsusc.2019.144668ISI: 000512983600126Scopus ID: 2-s2.0-85076612072OAI: oai:DiVA.org:kth-269445DiVA, id: diva2:1413722
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QC 20200311

Available from: 2020-03-11 Created: 2020-03-11 Last updated: 2020-03-11Bibliographically approved

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