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Photoluminescence Intensity Enhancement of Single Silicon Quantum Dots on a Metal Membrane with a Spacer
KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
KTH, School of Engineering Sciences (SCI), Applied Physics, Materials and Nanophysics.ORCID iD: 0000-0001-5304-913X
Ångström Laboratory, Uppsala University, Uppsala, 75105 Sweden.
KTH, Superseded Departments (pre-2005), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5260-5322
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2019 (English)In: Physica Status Solidi (A) Applications and Materials Science, article id 1900575Article in journal (Refereed) Published
Abstract [en]

Silicon quantum dots (Si QDs) featuring high photoluminescence (PL) intensity are necessary for the realization of different photonic and photovoltaic devices, such as light‐emitting diodes (LEDs) and luminescent solar concentrators (LSCs). Herein, Si QDs on a ≈100–200 nm thin silicon dioxide membrane with a metal back‐coating are prepared. The dots are formed from the device layer of a silicon‐on‐insulator (SOI) wafer by etching and thermal oxidation. Aluminum is sputtered on the backside of the membrane, acting as a back‐surface mirror, changing the local density of optical modes, as well as the local excitation field. The PL properties of such Si QDs are then characterized at the single‐particle level. It is found that the PL yield of single Si QDs on the membrane is enhanced by approximately one order of magnitude, compared with that of Si QDs outside the membrane under the same excitation power. These results indicate that advances in nanofabrication can substantially improve the optical properties of Si QDs, thus paving the way for their application.

Place, publisher, year, edition, pages
John Wiley & Sons, 2019. article id 1900575
National Category
Nano Technology
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URN: urn:nbn:se:kth:diva-268297DOI: 10.1002/pssa.201900575ISI: 000517122400003Scopus ID: 2-s2.0-85075216726OAI: oai:DiVA.org:kth-268297DiVA, id: diva2:1414504
Note

QC 20200313

Available from: 2020-03-13 Created: 2020-03-13 Last updated: 2020-04-03Bibliographically approved

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Publisher's full textScopushttps://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.201900575

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Zhou, JingjianPevere, FedericoLinnros, JanSychugov, Ilya

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Zhou, JingjianPevere, FedericoGatty, Hithesh K.Linnros, JanSychugov, Ilya
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