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A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 degrees C
KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electronics and Embedded systems.ORCID iD: 0000-0001-8854-7446
KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electronics and Embedded systems, Integrated devices and circuits.
KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electronics and Embedded systems.ORCID iD: 0000-0001-6705-1660
KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electronics and Embedded systems, Integrated devices and circuits.ORCID iD: 0000-0001-6459-749X
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2020 (English)In: IEEE Journal of the Electron Devices Society, ISSN 2168-6734, Vol. 8, no 1, p. 116-121Article in journal (Refereed) Published
Abstract [en]

An image sensor based on wide band gap silicon carbide (SiC) has the merits of high temperature operation and ultraviolet (UV) detection. To realize a SiC-based image sensor the challenge of opto-electronic on-chip integration of SiC photodetectors and digital electronic circuits must be addressed. Here, we demonstrate a novel SiC image sensor based on our in-house bipolar technology. The sensing part has 256 ( $16\times 16$ ) pixels. The digital circuit part for row and column selection contains two 4-to-16 decoders and one 8-bit counter. The digital circuits are designed in transistor-transistor logic (TTL). The entire circuit has 1959 transistors. It is the first demonstration of SiC opto-electronic on-chip integration. The function of the image sensor up to 400 degrees C has been verified by taking photos of the spatial patterns masked from UV light. The image sensor would play a significant role in UV photography, which has important applications in astronomy, clinics, combustion detection and art.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 2020. Vol. 8, no 1, p. 116-121
Keywords [en]
Silicon carbide (SiC), image sensor, ultraviolet (UV), photodiode, high temperature, bipolar junction transistor (BJT), transistor-transistor logic (TTL)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-270881DOI: 10.1109/JEDS.2020.2966680ISI: 000515658000001Scopus ID: 2-s2.0-85079349461OAI: oai:DiVA.org:kth-270881DiVA, id: diva2:1416850
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QC 20200325

Available from: 2020-03-25 Created: 2020-03-25 Last updated: 2020-03-25Bibliographically approved

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Hou, ShuobenShakir, MuhammadHellström, Per-ErikMalm, B. GunnarZetterling, Carl-MikaelÖstling, Mikael

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Hou, ShuobenShakir, MuhammadHellström, Per-ErikMalm, B. GunnarZetterling, Carl-MikaelÖstling, Mikael
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Electronics and Embedded systemsIntegrated devices and circuits
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IEEE Journal of the Electron Devices Society
Electrical Engineering, Electronic Engineering, Information Engineering

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