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Characterizing the Reliability and Threshold Voltage Shifting of 3D Charge Trap NAND Flash
Huazhong Univ Sci & Technol, Wuhan, Hubei, Peoples R China..
Huazhong Univ Sci & Technol, Wuhan, Hubei, Peoples R China..
Huazhong Univ Sci & Technol, Wuhan, Hubei, Peoples R China..
Huazhong Univ Sci & Technol, Wuhan, Hubei, Peoples R China..
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2019 (English)In: 2019 DESIGN, AUTOMATION & TEST IN EUROPE CONFERENCE & EXHIBITION (DATE), IEEE , 2019, p. 312-315Conference paper, Published paper (Refereed)
Abstract [en]

3D charge trap (CT) triple-level cell (TLC) NAND flash gradually becomes a mainstream storage component due to high storage capacity and performance, but introducing a concern about reliability. Fault tolerance and data management schemes are capable of improving reliability. Designing a more efficient solution, however, needs to understand the reliability characteristics of 3D CT TLC NAND flash. To facilitate such understanding, by exploiting a real-world testing platform, we investigate the reliability characteristics including the raw bit error rate (RBER) and the threshold voltage (Vth) shifting features after suffering from variable disturbances. We give analyses of why these characteristics exist in 3D CT TLC NAND flash. We hope these observations can guide the designers to propose high efficient solutions to the reliability problem.

Place, publisher, year, edition, pages
IEEE , 2019. p. 312-315
Series
Design Automation and Test in Europe Conference and Exhibition, ISSN 1530-1591
Keywords [en]
3D NAND Flash, Charge Trap, Reliability, Threshold Voltage Shifting
National Category
Telecommunications
Identifiers
URN: urn:nbn:se:kth:diva-270662DOI: 10.23919/date.2019.8714941ISI: 000470666100058Scopus ID: 2-s2.0-85066612983ISBN: 978-3-9819263-2-3 (print)OAI: oai:DiVA.org:kth-270662DiVA, id: diva2:1416872
Conference
22nd Design, Automation and Test in Europe Conference and Exhibition (DATE), MAR 25-29, 2019, Florence, ITALY
Note

QC 20200325

Available from: 2020-03-25 Created: 2020-03-25 Last updated: 2020-05-11Bibliographically approved

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Lu, Zhonghai

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CiteExportLink to record
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