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Ion bombardment induced formation of self-organized wafer-scale GaInP nanopillar assemblies
KTH, School of Engineering Sciences (SCI), Applied Physics.ORCID iD: 0000-0002-7057-9762
KTH, School of Engineering Sciences (SCI), Applied Physics, Materials and Nanophysics.ORCID iD: 0000-0002-4787-3904
KTH, School of Engineering Sciences (SCI), Applied Physics.
KTH, School of Engineering Sciences (SCI), Applied Physics, Materials and Nanophysics.ORCID iD: 0000-0001-9986-2716
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2020 (English)In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, ISSN 2166-2746, E-ISSN 2166-2754, Vol. 38, no 1, article id 012801Article in journal (Refereed) Published
Abstract [en]

Ion sputtering assisted formation of nanopillars is demonstrated as a wafer-scale, lithography-free fabrication method to obtain high optical quality gallium indium phosphide (GaInP) nanopillars. Compared to binary materials, little has been reported on the formation of self-organized ternary nanostructures. Epitaxial (100) Ga0.51In0.49P layers lattice matched to GaAs were sputtered by nitrogen (N2) ions with relatively low ion beam energies (∼400 eV) to reduce ion bombardment induced damage. The influence of process parameters such as temperature, sputter duration, ion beam energy, and ion beam incidence angle on the pillar formation is investigated. The fabricated GaInP nanopillars have average diameters of ∼75-100 nm, height of ∼220 nm, and average density of ∼2-4 × 108 pillars/cm2. The authors show that the ion beam incidence angle plays an important role in pillar formation and can be used to tune the pillar shape, diameter, and spatial density. Specifically, tapered to near cylindrical pillar profiles together with a reduction in their average diameters are obtained by varying the ion beam incidence angle from 0° to 20°. A tentative model for the GaInP nanopillar formation is proposed based on transmission electron microscopy and chemical mapping analysis. μ-Photoluminescence and μ-Raman measurements indicate a high optical quality of the c-GaInP nanopillars.

Place, publisher, year, edition, pages
AVS Science and Technology Society , 2020. Vol. 38, no 1, article id 012801
Keywords [en]
Chemical analysis, Gallium arsenide, High resolution transmission electron microscopy, III-V semiconductors, Indium phosphide, Ion beams, Ion bombardment, Nanopillars, Semiconducting indium phosphide, Semiconductor alloys, Beam incidence angle, Fabrication method, Gallium indium phosphide, Influence of process parameters, Nanopillar formation, Raman measurements, Spatial densities, Ternary nanostructure, Phosphorus compounds
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-268003DOI: 10.1116/1.5127265Scopus ID: 2-s2.0-85076955159OAI: oai:DiVA.org:kth-268003DiVA, id: diva2:1417503
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QC 20200329

Available from: 2020-03-29 Created: 2020-03-29 Last updated: 2020-03-29Bibliographically approved

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Visser, DennisJaramillo Fernandez, JulianaSotomayor Torres, Clivia M.Anand, Srinivasan

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Visser, DennisJaramillo Fernandez, JulianaHaddad, GabrielSotomayor Torres, Clivia M.Anand, Srinivasan
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