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Selective epitaxial growth of in situ doped SiGe on bulk Ge substrates forp+/n junction formation
KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electronics and Embedded systems.
KTH, Superseded Departments (pre-2005), Microelectronics and Information Technology, IMIT. KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electronics and Embedded systems.ORCID iD: 0000-0001-6705-1660
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(English)Manuscript (preprint) (Other (popular science, discussion, etc.))
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Electrical Engineering, Electronic Engineering, Information Engineering
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URN: urn:nbn:se:kth:diva-271906OAI: oai:DiVA.org:kth-271906DiVA, id: diva2:1423195
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QC 20200414

Available from: 2020-04-14 Created: 2020-04-14 Last updated: 2020-04-14

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Garidis, KonstantinosAbedin, AhmadAsadollahi, AliHellström, Per-ErikÖstling, Mikael

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Garidis, KonstantinosAbedin, AhmadAsadollahi, AliHellström, Per-ErikÖstling, Mikael
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Electronics and Embedded systemsMicroelectronics and Information Technology, IMIT
Electrical Engineering, Electronic Engineering, Information Engineering

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