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Design impact on the performance of Ge PIN photodetectors
Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R China.;Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China..
KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Electronics and Embedded systems, Integrated devices and circuits.ORCID iD: 0000-0003-1036-6391
KTH, School of Engineering Sciences (SCI), Applied Physics, Biomedical and X-ray Physics.
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.;Univ Chinese Acad Sci, Beijing 100049, Peoples R China..
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2020 (English)In: Journal of materials science. Materials in electronics, ISSN 0957-4522, E-ISSN 1573-482X, Vol. 31, no 1, p. 18-25Article in journal (Refereed) Published
Abstract [en]

This article presents the impact of epitaxial quality, contact resistance and profile of Ge PIN photodetectors (PDs) on dark current and responsivity. The PD structures were processed with either selectively grown Ge with integrated waveguides on SOI wafer or globally grown Ge on the entire wafer. The contact resistance was lowered by introducing NiGe layer prior to the metallization. The n-type doped Ge PIN structure was formed by ion implantation and the contact resistivity was estimated to 2.6x10(-4) ohm cm(2). This value is rather high and it is believed to be due to fomation of defects during implantation. The results show a minor difference in dark currents for selectively and globally grown PDs but in both types, it depends on detector area and the epitaxial quality of Ge. For example, the threading dislocation density (TDD) in non-selectively grown PDs with thickness of 1 mu m was estimated to be 10(6) cm(-2) yielding relatively low dark currents while it dramatically changes for PDs with thinner Ge layers where TDD increases to 10(8) cm(-2) and the dark current levels increase almost by 1.5 magnitude. Surprisingly, for selectively grown PDs with Ge thickness of 500 nm, TDD was still low resulting in low dark currents. The dark current densities at -1 V bias of non-selectively and selectively grown PDs with optimized profile were measured to be 5 mA/cm(2) and 47 mA/cm(2), respectively, while the responsivity of these detectors were 0.17 A/W and 0.46 A/W at lambda similar to 1.55 mu m, respectively. Excellent performance for selectively grown PD shows an appropriate choice for detection of 1.55 mu m wavelength.

Place, publisher, year, edition, pages
Springer, 2020. Vol. 31, no 1, p. 18-25
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-271534DOI: 10.1007/s10854-018-00650-wISI: 000518400500004Scopus ID: 2-s2.0-85060618359OAI: oai:DiVA.org:kth-271534DiVA, id: diva2:1426573
Conference
European-Material-Research-Society (EMRS) Spring Meeting - Symposium G on Carrier Transport, Photonics and Sensing in Group IV-Based and Other Semiconductors Nano Devices, JUN 18-22, 2018, Strasbourg, France
Note

QC 20200427

Available from: 2020-04-27 Created: 2020-04-27 Last updated: 2020-04-27Bibliographically approved

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