MOVPE growth of strained 1300 nm InGaAlAsP/ InGaAsP quantum well structures
2000 (English)In: 12th International Conference on Indium Phosphide and Related Materials, 2000, 380-383 p.Conference paper (Refereed)
In this work we propose novel 1.3 μm InGaAlAsP/InGaAsP MQW laser structures designed for high-temperature operation. The effects of aluminum on the band offsets and carrier confinement in MQW structures have been investigated. Epitaxial structures exhibited very high photoluminescence (PL) and sharp satellites in high-resolution x-ray diffraction. The carrier transport issues were further investigated using femtosecond time-resolved PL. Broad area lasers exhibited values of threshold current density of 261 A/cm-2 per quantum well and a slope efficiency of 0.25 W/A. The observed T0 values of 69 K for pure InGaAsP barriers increased to about 95 K for an Al content of about 12.5%, in accordance with expectations.
Place, publisher, year, edition, pages
2000. 380-383 p.
Aluminum, Charge carriers, Current density, High temperature operations, Metallorganic vapor phase epitaxy, Photoluminescence, Semiconducting indium gallium arsenide, Semiconducting indium phosphide, Semiconductor device structures, Semiconductor growth, X ray crystallography, Indium gallium aluminum arsenic phosphide, Indium gallium arsenic phosphide
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-8831DOI: 10.1109/ICIPRM.2000.850312OAI: oai:DiVA.org:kth-8831DiVA: diva2:14293
QC 201009302005-11-302005-11-302010-09-30Bibliographically approved