Studies on the carrier transport in InGaAlAdP/InGaAsP quantum well structures emitting at 1.3 μm
2000 (English)In: Conference on Lasers and Electro-Optics Europe - Technical Digest, 2000, 141- p.Conference paper (Refereed)
A novel approach to improve high temperature performance in the IngaAsP lasers was examined by adding aluminum to the barrier,which allows to increase conduction band offset. To find optimal heterostructure parameters, different barrier material compositions were examined in structures with InGaAsP compressively strained wells and tensile strained InGaAlAsP barriers. The MQW structures were fabricated by low pressure MOVPE.
Place, publisher, year, edition, pages
2000. 141- p.
Carrier concentration, Charge carriers, Heterojunctions, Metallorganic chemical vapor deposition, Semiconducting indium compounds, Carrier transport
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-8833DOI: 10.1109/CLEOE.2000.909932ISBN: 0-7803-6319-1OAI: oai:DiVA.org:kth-8833DiVA: diva2:14295
QC 201009302005-11-302005-11-302011-09-02Bibliographically approved