Strain effects on highly strained InAsP/InGaP multi-quantum well structures grown by MOVPE using TBAs and TBP
2004 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 265, no 3-4, 357-366 p.Article in journal (Refereed) Published
The influence of the strain on the material quality of highly strained InAsP/InGaP multi-quantum well (MQW) systems has been studied. The main purpose of our study was to investigate and optimise the epitaxial crystal quality of different QWs structures in order to obtain the best well-barrier system. The strain-compensation technique enabled us to grow InAsP/InGaP-MQWs with strain exceeding ±1% and as many as 20 wells without any material deterioration. The strain-compensated structures have been grown by metalorganic vapor phase epitaxy (MOVPE) using TertiaryButylArsine (TBAs) and TertiaryButylPhosphine (TBP) as group V precursors. Photoluminescence (PL), High-Resolution X-ray Diffraction (HR-XRD), Transmission Electron Microscopy (TEM) have been used to study the MQW structures. Net strain, shear strain and residual strain have been used to evaluate the strain effects on the material quality: strain compensation and abruptness of MQW interfaces are needed in order to obtain high performance material. In addition, in this system, the experimental data suggest that the influence of the strain compensation at the interface between well and barrier, which we define as 'symmetrical' strain, seems to be important in determining the quality of the MQW stacks.
Place, publisher, year, edition, pages
2004. Vol. 265, no 3-4, 357-366 p.
A1. Crystal morphology, A1. High resolution X-ray diffraction, A1. Strain, A3. Metalorganic vapor phase epitaxy, B1. InAsP, B1. InGaP, B1. TBAs, B1. TBP, B2. Semiconductor III-V materials
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-8834DOI: 10.1016/j.jcrysgro.2004.02.093ISI: 000221205100004OAI: oai:DiVA.org:kth-8834DiVA: diva2:14296
QC 201009302005-11-302005-11-302010-09-30Bibliographically approved