Etching of InP-based MQW laser structure in a MOCVD reactor by chlorinated compounds
1998 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 195, no 1-4, 624-629 p.Article in journal (Refereed) Published
Four different chlorinated compounds: 2-chloropropane, dichloromethane, chloroform and carbon tetrachloride have been used to etch InGaAsP/InP MQW laser structures partially masked. Etching experiments were performed in a home-made LP-MOCVD reactor with argon or argon + hydrogen as carrier gas, using phosphine (PH3) or tertiarybutylphosphine (TBP) to prevent thermal decomposition. The etching temperature as well as the chlorinated compound flow were varied to obtain the best trade-off between etch rate and surface morphology. The optimized experimental conditions were applied to etch mesa stripes in a SCH-MQW laser structure, for the first time to our knowledge, followed by lateral InP : Fe regrowth in the same step. Threshold current as low as 4 mA (best value)-6 mA (typical value) and differential quantum efficiency higher than 20% for SI-BM MQW laser have been achieved.
Place, publisher, year, edition, pages
1998. Vol. 195, no 1-4, 624-629 p.
Argon, Carbon tetrachloride, Etching, Hydrogen, Metallorganic chemical vapor deposition, Morphology, Pyrolysis, Quantum efficiency, Semiconducting indium phosphide, Semiconductor device structures, Semiconductor quantum wells, Chloroform, Chloropropane, Dichloromethane, Low-pressure metallorganic chemical vapor deposition, Tertiarybutylphosphine
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-8836DOI: 10.1016/S0022-0248(98)00671-XISI: 000077839200100OAI: oai:DiVA.org:kth-8836DiVA: diva2:14298
QC 201009302005-11-302005-11-302010-09-30Bibliographically approved