High reliability, high yield, high modulation bandwidth, low threshold current 1.55 μm MQW laser by new in-situ etching technique
1998 (English)In: European Conference on Optical Communication, ECOC, 1998, 75-76 p.Conference paper (Refereed)
For the first time, to our knowledge, an InP based Fabry-Perot MQW semiconductor laser is obtained by using an in-situ etching technique. Good static and dynamic laser characteristics together with high process yield and reliability confirm the validity of this new technological process.
Place, publisher, year, edition, pages
1998. 75-76 p.
Bandwidth, Electric currents, Etching, Semiconducting indium phosphide, In-situ etching techniques, Threshold current
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-8837DOI: 10.1109/ECOC.1998.732443ISBN: 84-89900-14-0OAI: oai:DiVA.org:kth-8837DiVA: diva2:14299
QC 201009302005-11-302005-11-302010-09-30Bibliographically approved