Ga assisted in situ etching of AlGaInAs and InGaAsP multi quantum well structures using tertiarybutylchloride
2005 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 282, no 1-2, 7-17 p.Article in journal (Refereed) Published
In this work, we present Studies on the in situ etching (ISE) technique using tertiarybutylchloride (TBCl) as etchant precursor in a metal organic vapour phase epitaxy (MOVPE) reactor. Experiments were made in PH3 and PH3-free environments at low pressures (50-100 mbar) and in a low-temperature regime (545-600 degrees C). In particular, the combination of standard reactive ion etching (RIE) and ISE for the realization of suitable mesa structures for device applications has been systematically investigated. In our etching experiments InP, InGaAsP and Al-containing multi quantum wells (MQWs) have been used as etching targets. Particular efforts were devoted to the etching of Al-containing structures. For this material, the addition of trimethylgallium (TMGa) during the etching resulted to be of key importance in providing good surface morphology and etching of the MQW structure. The role of Ga species in the etching mechanisms will be discussed. The dependence of surface morphology and mesa shape on etching conditions, in particular, temperature, chlorine concentration, gallium concentration and etching time, will be described.
Place, publisher, year, edition, pages
2005. Vol. 282, no 1-2, 7-17 p.
in situ etching, MOVPE, aluminium, tertiarybutylchloride, semiconducting III-V materials
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-8838DOI: 10.1016/j.jcrysgro.2005.04.080ISI: 000231200900002OAI: oai:DiVA.org:kth-8838DiVA: diva2:14300
QC 201009302005-11-302005-11-302010-09-30Bibliographically approved