Quasi-three-level Nd:YAG laser under diode pumping directly into the emitting level
2006 (English)In: Optics Communications, ISSN 0030-4018, E-ISSN 1873-0310, Vol. 261, no 1, 109-113 p.Article in journal (Refereed) Published
We present theoretical and experimental investigations on ground-state direct pumping at 869 nm into the emitting level F-4(3/2) of end-pumped quasi-three-level Nd:YAG lasers operating at 946 nm. We have demonstrated, what we believe is for the first time, a Nd:YAG laser at 946 nm directly pumped by diodes and obtained 1.6 W of output power.
Place, publisher, year, edition, pages
2006. Vol. 261, no 1, 109-113 p.
Diode-pumped solid-state lasers, Direct pumping, Quasi-three-level lasers, Diodes, Electron transitions, Ground state, Optical communication, Optical pumping, Solid state lasers, Diode-pumped solid-state lasers, Direct pumping, Emitting level, Nd:YAG laser, Quasi-three-level lasers, Neodymium lasers
IdentifiersURN: urn:nbn:se:kth:diva-8890DOI: 10.1016/j.optcom.2005.11.058ISI: 000236864000019ScopusID: 2-s2.0-33645846916OAI: oai:DiVA.org:kth-8890DiVA: diva2:14369
QC 20100901. Uppdaterad från Submitted till Published 20100901.2005-12-082005-12-082015-03-30Bibliographically approved